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Publications in Math-Net.Ru |
Citations |
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2020 |
| 1. |
A. S. Saidov, A. Yu. Leiderman, Sh. N. Usmonov, U. P. Asatova, “Peculiarities of the current–voltage characteristic of $n$-GaP–$p$-(InSb)$_{1-x}$(Sn$_{2}$)$_{x}$ heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:22 (2020), 23–26   ; Tech. Phys. Lett., 46:11 (2020), 1124–1127 |
4
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2018 |
| 2. |
A. S. Saidov, A. Yu. Leiderman, Sh. N. Usmonov, K. A. Amonov, “Effect of injection depletion in $p$-Si–$n$-(Si$_{2}$)$_{1-x}$(ZnSe)$_{x}$ (0 $\le x\le$ 0.01) heterostructure”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 1066–1070 ; Semiconductors, 52:9 (2018), 1188–1192 |
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2016 |
| 3. |
S. Zaynabidinov, A. S. Saidov, A. Yu. Leiderman, M. U. Kalanov, Sh. N. Usmonov, V. M. Rustamova, A. Boboev, “Growth, structure, and properties of GaAs-based (GaAs)$_{1-x-y}$(Ge$_{2}$)$_{x}$(ZnSe)$_{y}$ epitaxial films”, Fizika i Tekhnika Poluprovodnikov, 50:1 (2016), 60–66 ; Semiconductors, 50:1 (2016), 59–65 |
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2015 |
| 4. |
A. S. Saidov, Sh. N. Usmonov, M. S. Saidov, “Liquid-phase epitaxy of the (Si$_2$)$_{1-x-y}$(Ge$_2$)$_x$(GaAs)$_y$ substitutional solid solution (0 $\le x\le$ 0.91, 0 $\le y\le$ 0.94) and their electrophysical properties”, Fizika i Tekhnika Poluprovodnikov, 49:4 (2015), 557–560 ; Semiconductors, 49:4 (2015), 547–550 |
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2014 |
| 5. |
Sh. N. Usmonov, A. S. Saidov, A. Yu. Leiderman, “Effect of injection depletion in $p$–$n$ heterostructures based on solid solutions (Si$_2$)$_{1-x-y}$(Ge$_2$)$_x$(GaAs)$_y$, (Si$_2$)$_{1-x}$(CdS)$_x$, (InSb)$_{1-x}$(Sn$_2$)$_x$, and CdTe$_{1-x}$S$_x$”, Fizika Tverdogo Tela, 56:12 (2014), 2319–2325 ; Phys. Solid State, 56:12 (2014), 2401–2407 |
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2013 |
| 6. |
A. S. Saidov, Sh. N. Usmonov, M. U. Kalanov, A. N. Kurmantayev, A. N. Bahtybayev, “Structural and some electrophysical properties of the solid solutions Si$_{1-x}$Sn$_x$ (0 $\le x\le$ 0.04)”, Fizika Tverdogo Tela, 55:1 (2013), 36–43 ; Phys. Solid State, 55:1 (2013), 45–53 |
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2012 |
| 7. |
A. S. Saidov, Sh. N. Usmonov, U. P. Asatova, “Growth of Ge$_{1-x}$Sn$_x$ solid solution films and study of their structural properties and some of their photoelectric properties”, Fizika i Tekhnika Poluprovodnikov, 46:8 (2012), 1111–1119 ; Semiconductors, 46:8 (2012), 1088–1095 |
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