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Publications in Math-Net.Ru |
Citations |
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2020 |
| 1. |
S. V. Tikhov, V. G. Shengurov, S. A. Denisov, I. N. Antonov, A. V. Kruglov, A. I. Belov, D. O. Filatov, O. N. Gorshkov, A. N. Mikhaylov, “Resistive switching in metal–oxide–semiconductor structures with GeSi nanoislands on a silicon substrate”, Zhurnal Tekhnicheskoi Fiziki, 90:10 (2020), 1741–1749   ; Tech. Phys., 65:10 (2020), 1668–1676 |
| 2. |
S. V. Tikhov, A. I. Belov, D. S. Korolev, I. N. Antonov, A. A. Sushkov, D. A. Pavlov, D. I. Tetelbaum, O. N. Gorshkov, A. N. Mikhaylov, “Electrophysical characteristics of multilayer memristive nanostructures based on yttria-stabilized zirconia and tantalum oxide”, Zhurnal Tekhnicheskoi Fiziki, 90:2 (2020), 298–304 ; Tech. Phys., 65:2 (2020), 284–290 |
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2019 |
| 3. |
S. V. Tikhov, O. N. Gorshkov, A. I. Belov, I. N. Antonov, A. I. Morozov, M. N. Koryazhkina, A. N. Mikhaylov, “Mechanisms of current transport and resistive switching in capacitors with yttria-stabilized hafnia layers”, Zhurnal Tekhnicheskoi Fiziki, 89:6 (2019), 927–934 ; Tech. Phys., 64:6 (2019), 873–880 |
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2018 |
| 4. |
S. V. Tikhov, O. N. Gorshkov, I. N. Antonov, D. I. Tetelbaum, A. N. Mikhaylov, A. I. Belov, A. I. Morozov, P. Karakolis, P. Dimitrakis, “Behavioral features of MIS memristors with a Si$_{3}$N$_{4}$ nanolayer fabricated on a conductive Si substrate”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1436–1442 ; Semiconductors, 52:12 (2018), 1540–1546 |
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| 5. |
D. O. Filatov, I. N. Antonov, D. Yu. Sinutkin, D. A. Liskin, A. P. Gorshkov, O. N. Gorshkov, V. E. Kotomina, M. E. Shenina, S. V. Tikhov, I. S. Korotaeva, “Plasmon resonance induced photoconductivity in the yttria stabilized zirconia films with embedded Au nanoclusters”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 470 ; Semiconductors, 52:4 (2018), 465–467 |
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2016 |
| 6. |
S. V. Tikhov, O. N. Gorshkov, I. N. Antonov, A. P. Kasatkin, D. S. Korolev, A. I. Belov, A. N. Mikhaylov, D. I. Tetelbaum, “Change of immitance during electroforming and resistive switching in the metal-insulator-metal memristive structures based on SiO$_{x}$”, Zhurnal Tekhnicheskoi Fiziki, 86:5 (2016), 107–111 ; Tech. Phys., 61:5 (2016), 745–749 |
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| 7. |
M. N. Koryazhkina, S. V. Tikhov, O. N. Gorshkov, A. P. Kasatkin, I. N. Antonov, “Electrical and photoelectric properties of Si-based metal–insulator–semiconductor structures with Au nanoparticles at the insulator–semiconductor interface”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1639–1643 ; Semiconductors, 50:12 (2016), 1614–1618 |
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| 8. |
S. V. Tikhov, O. N. Gorshkov, M. N. Koryazhkina, A. P. Kasatkin, I. N. Antonov, O. V. Vikhrova, A. I. Morozov, “Physical properties of metal–insulator–semiconductor structures based on $n$-GaAs with InAs quantum dots deposited onto the surface of an $n$-GaAs layer”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1615–1619 ; Semiconductors, 50:12 (2016), 1589–1594 |
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| 9. |
S. V. Tikhov, O. N. Gorshkov, M. N. Koryazhkina, I. N. Antonov, A. P. Kasatkin, “Light-induced resistive switching in silicon-based metal–insulator–semiconductor structures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:10 (2016), 78–84 ; Tech. Phys. Lett., 42:5 (2016), 536–538 |
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| 10. |
S. V. Tikhov, O. N. Gorshkov, M. N. Koryazhkina, I. N. Antonov, A. P. Kasatkin, “Specific features of nonequilibrium depletion accompanied by the trapping of minority carriers by surface states in metal–insulator–semiconductor structures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:3 (2016), 52–60 ; Tech. Phys. Lett., 42:2 (2016), 138–142 |
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2015 |
| 11. |
N. S. Volkova, A. P. Gorshkov, S. V. Tikhov, N. V. Baidus, S. V. Khazanova, V. E. Degtyarov, D. O. Filatov, “Influence of the spatial arrangement of the Si $\delta$ layer on the optoelectronic properties of InGaAs/GaAs quantum-well nanoheterostructures”, Fizika i Tekhnika Poluprovodnikov, 49:2 (2015), 145–148 ; Semiconductors, 49:2 (2015), 139–142 |
| 12. |
S. V. Khazanova, V. E. Degtyarov, S. V. Tikhov, N. V. Baidus, “Simulation of the effective concentration profiles in InGaAs/GaAs heterostructures containing $\delta$-doped layers”, Fizika i Tekhnika Poluprovodnikov, 49:1 (2015), 53–57 ; Semiconductors, 49:1 (2015), 50–54 |
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2014 |
| 13. |
S. V. Tikhov, O. N. Gorshkov, I. N. Antonov, A. P. Kasatkin, M. N. Koryazhkina, “The forming process in resistive-memory elements based on metal–insulator–semiconductor structures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:19 (2014), 18–26 ; Tech. Phys. Lett., 40:10 (2014), 837–840 |
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| 14. |
S. V. Tikhov, O. N. Gorshkov, D. A. Pavlov, I. N. Antonov, A. I. Bobrov, A. P. Kasatkin, M. N. Koryazhkina, M. E. Shenina, “Capacitors with nonlinear characteristics based on stabilized zirconia with built-in gold nanoparticles”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:9 (2014), 9–16 ; Tech. Phys. Lett., 40:5 (2014), 369–371 |
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2013 |
| 15. |
S. V. Tikhov, O. N. Gorshkov, I. N. Antonov, A. P. Kasatkin, M. N. Koryazhkina, “Features of Fermi-level pinning at the interface of Al$_{0.3}$Ga$_{0.7}$As with anodic oxide and stabilized zirconia”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:23 (2013), 72–79 ; Tech. Phys. Lett., 39:12 (2013), 1064–1067 |
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2012 |
| 16. |
S. V. Tikhov, N. V. Baidus, A. A. Biryukov, V. E. Degtyarov, “Admittance spectroscopy of ring diode InGaAs/InAlAs/InP quantum-well structures”, Fizika i Tekhnika Poluprovodnikov, 46:12 (2012), 1561–1565 ; Semiconductors, 46:12 (2012), 1524–1528 |
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| 17. |
S. V. Tikhov, N. V. Baidus, A. A. Biryukov, S. V. Khazanova, “Determination of the electron concentration and mobility in the vicinity of a quantum well and $\delta$-doped layer in InGaAs/GaAs heterostructures”, Fizika i Tekhnika Poluprovodnikov, 46:12 (2012), 1532–1536 ; Semiconductors, 46:12 (2012), 1497–1501 |
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| 18. |
S. V. Tikhov, “Small-signal field effect in GaAs/InAs quantum-dot heterostructures”, Fizika i Tekhnika Poluprovodnikov, 46:10 (2012), 1297–1303 ; Semiconductors, 46:10 (2012), 1274–1280 |
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| 19. |
D. I. Tetelbaum, S. V. Tikhov, E. V. Kuril'chik, Yu. A. Mendeleva, “Long-range effect of the irradiation of silicon with light on the Schottky-barrier photovoltage”, Fizika i Tekhnika Poluprovodnikov, 46:5 (2012), 641–643 ; Semiconductors, 46:5 (2012), 622–624 |
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