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Publications in Math-Net.Ru |
Citations |
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2020 |
| 1. |
R. Kh. Zhukavin, K. A. Kovalevsky, S. G. Pavlov, N. Deßmann, A. Pohl, V. V. Tsyplenkov, N. V. Abrosimov, H. Riemann, H.-W. Hübers, V. N. Shastin, “Frequency tuning of terahertz stimulated emission under the intracenter optical excitation of uniaxially stressed Si:Bi”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 816–821   ; Semiconductors, 54:8 (2020), 969–974 |
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2019 |
| 2. |
R. Kh. Zhukavin, S. G. Pavlov, A. Pohl, N. V. Abrosimov, H. Riemann, B. Redlich, H.-W. Hübers, V. N. Shastin, “Stimulated terahertz emission of bismuth donors in uniaxially strained silicon under optical intracenter excitation”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1285–1288 ; Semiconductors, 53:9 (2019), 1255–1257 |
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2016 |
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A. P. Detochenko, S. A. Denisov, M. N. Drozdov, A. I. Mashin, V. A. Gavva, A. D. Bulanov, A. V. Nezhdanov, A. A. Ezhevskii, M. V. Stepikhova, V. Yu. Chalkov, V. N. Trushin, D. V. Shengurov, V. G. Shengurov, N. V. Abrosimov, H. Riemann, “Epitaxially grown monoisotopic Si, Ge, and Si$_{1-x}$Ge$_{x}$ alloy layers: production and some properties”, Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 350–353 ; Semiconductors, 50:3 (2016), 345–348 |
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2013 |
| 4. |
K. A. Kovalevsky, R. Kh. Zhukavin, V. V. Tsyplenkov, V. N. Shastin, N. V. Abrosimov, H. Riemann, S. G. Pavlov, H.-W. Hübers, “Shallow-donor lasers in uniaxially stressed silicon”, Fizika i Tekhnika Poluprovodnikov, 47:2 (2013), 199–205 ; Semiconductors, 47:2 (2013), 235–241 |
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A. A. Ezhevskii, S. A. Popkov, A. V. Soukhorukov, D. V. Guseinov, V. A. Gavva, A. V. Gusev, N. V. Abrosimov, H. Riemann, “Monoisotopic silicon $^{28}$Si in spin resonance spectroscopy of electrons localized at donors”, Fizika i Tekhnika Poluprovodnikov, 47:2 (2013), 168–173 ; Semiconductors, 47:2 (2013), 203–208 |
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2012 |
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A. A. Ezhevskii, S. A. Popkov, A. V. Soukhorukov, D. V. Guseinov, N. V. Abrosimov, H. Riemann, “Investigation of the structure of the ground state of lithium donor centers in silicon enriched in $^{28}$Si isotope and the influence of internal strain in the crystal on this structure”, Fizika i Tekhnika Poluprovodnikov, 46:11 (2012), 1468–1474 ; Semiconductors, 46:11 (2012), 1437–1442 |
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