|
|
|
Publications in Math-Net.Ru |
Citations |
|
2019 |
| 1. |
S. D. Fedotov, V. N. Statsenko, N. N. Egorov, S. A. Golubkov, “Effect of solid-state epitaxial recrystallization on defect density in ultrathin silicon-on-sapphire layers”, Fizika Tverdogo Tela, 61:12 (2019), 2349–2354   ; Phys. Solid State, 61:12 (2019), 2353–2358 |
1
|
|
2014 |
| 2. |
A. A. Shemukhin, Yu. V. Balakshin, V. S. Chernysh, S. A. Golubkov, N. N. Egorov, A. I. Sidorov, “Defect formation and recrystallization mechanisms in silicon-on-sapphire films under ion irradiation”, Fizika i Tekhnika Poluprovodnikov, 48:4 (2014), 535–538 ; Semiconductors, 48:4 (2014), 517–520 |
11
|
|
2012 |
| 3. |
A. A. Shemukhin, Yu. V. Balakshin, V. S. Chernysh, A. S. Patrakeev, S. A. Golubkov, N. N. Egorov, A. I. Sidorov, B. A. Malyukov, V. N. Statsenko, V. D. Chumak, “Fabrication of ultrafine silicon layers on sapphire”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:19 (2012), 83–89 ; Tech. Phys. Lett., 38:10 (2012), 907–909 |
14
|
|
| Organisations |
|
|
