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Publications in Math-Net.Ru |
Citations |
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2017 |
| 1. |
D. S. Korolev, A. A. Nikolskaya, N. O. Krivulin, A. I. Belov, A. N. Mikhaylov, D. A. Pavlov, D. I. Tetelbaum, N. A. Sobolev, M. Kumar, “Formation of hexagonal 9$R$ silicon polytype by ion implantation”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:16 (2017), 87–92  ; Tech. Phys. Lett., 43:8 (2017), 767–769 |
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2015 |
| 2. |
N. O. Krivulin, A. V. Pirogov, D. A. Pavlov, A. I. Bobrov, “Study of the crystal structure of silicon nanoislands on sapphire”, Fizika i Tekhnika Poluprovodnikov, 49:2 (2015), 160–162  ; Semiconductors, 49:2 (2015), 154–156 |
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| 3. |
D. A. Pavlov, A. V. Pirogov, N. O. Krivulin, A. I. Bobrov, “Epitaxial growth of hexagonal silicon polytypes on sapphire”, Fizika i Tekhnika Poluprovodnikov, 49:1 (2015), 98–101 ; Semiconductors, 49:1 (2015), 95–98 |
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2013 |
| 4. |
N. O. Krivulin, D. A. Pavlov, P. A. Shilyaev, “Growth model of silicon nanoislands on sapphire”, Fizika i Tekhnika Poluprovodnikov, 47:12 (2013), 1621–1623 ; Semiconductors, 47:12 (2013), 1595–1597 |
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D. A. Pavlov, P. A. Shilyaev, A. V. Pirogov, N. O. Krivulin, A. I. Bobrov, M. D. Pegasina, “Analysis of the growth dependences of silicon-on-sapphire heteroepitaxy”, Fizika i Tekhnika Poluprovodnikov, 47:6 (2013), 854–858 ; Semiconductors, 47:6 (2013), 865–869 |
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