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Publications in Math-Net.Ru |
Citations |
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2017 |
| 1. |
D. A. Grachev, A. V. Ershov, I. A. Karabanova, A. V. Pirogov, A. V. Nezhdanov, A. I. Mashin, D. A. Pavlov, “Influence of the deposition and annealing temperatures on the luminescence of germanium nanocrystals formed in GeO$_{x}$ films and multilayer Ge/SiO$_{2}$ structures”, Fizika Tverdogo Tela, 59:5 (2017), 965–971   ; Phys. Solid State, 59:5 (2017), 992–998 |
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2016 |
| 2. |
D. S. Korolev, A. N. Mikhaylov, A. I. Belov, V. K. Vasil'ev, D. V. Guseinov, E. V. Okulich, A. A. Shemukhin, S. I. Surodin, D. E. Nikolichev, A. V. Nezhdanov, A. V. Pirogov, D. A. Pavlov, D. I. Tetelbaum, “Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 274–278 ; Semiconductors, 50:2 (2016), 271–275 |
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2015 |
| 3. |
N. O. Krivulin, A. V. Pirogov, D. A. Pavlov, A. I. Bobrov, “Study of the crystal structure of silicon nanoislands on sapphire”, Fizika i Tekhnika Poluprovodnikov, 49:2 (2015), 160–162 ; Semiconductors, 49:2 (2015), 154–156 |
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| 4. |
D. A. Pavlov, A. V. Pirogov, N. O. Krivulin, A. I. Bobrov, “Epitaxial growth of hexagonal silicon polytypes on sapphire”, Fizika i Tekhnika Poluprovodnikov, 49:1 (2015), 98–101 ; Semiconductors, 49:1 (2015), 95–98 |
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N. V. Dikareva, O. V. Vikhrova, B. N. Zvonkov, N. V. Malekhonova, S. M. Nekorkin, A. V. Pirogov, D. A. Pavlov, “Effect of thermal annealing on the emission properties of heterostructures containing a quantum-confined GaAsSb layer”, Fizika i Tekhnika Poluprovodnikov, 49:1 (2015), 11–14 ; Semiconductors, 49:1 (2015), 9–12 |
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2013 |
| 6. |
D. A. Pavlov, P. A. Shilyaev, A. V. Pirogov, N. O. Krivulin, A. I. Bobrov, M. D. Pegasina, “Analysis of the growth dependences of silicon-on-sapphire heteroepitaxy”, Fizika i Tekhnika Poluprovodnikov, 47:6 (2013), 854–858 ; Semiconductors, 47:6 (2013), 865–869 |
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