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Publications in Math-Net.Ru |
Citations |
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2016 |
| 1. |
E. A. Tarasova, A. V. Hananova, S. V. Obolensky, V. E. Zemlyakov, Yu. N. Sveshnikov, V. I. Egorkin, V. A. Ivanov, G. V. Medvedev, D. S. Smotrin, “Study of the electron distribution in GaN and GaAs after $\gamma$-neutron irradiation”, Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 331–338   ; Semiconductors, 50:3 (2016), 326–333 |
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2014 |
| 2. |
A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, R. V. Konakova, L. M. Kapitanchuk, V. N. Sheremet, Yu. N. Sveshnikov, A. S. Pilipchuk, “Mechanism of current flow in a Au–Ti–Al–Ti–n$^+$-GaN ohmic contact in the temperature range of 4.2–300 K”, Fizika i Tekhnika Poluprovodnikov, 48:10 (2014), 1344–1347 ; Semiconductors, 48:10 (2014), 1308–1311 |
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2012 |
| 3. |
G. I. Koltsov, S. I. Didenko, A. V. Chernykh, S. V. Chernykh, A. P. Chubenko, Yu. N. Sveshnikov, “Schottky contacts to high-resistivity epitaxial GaAs layers for detectors of particles and X- or $\gamma$-ray photons”, Fizika i Tekhnika Poluprovodnikov, 46:8 (2012), 1088–1093 ; Semiconductors, 46:8 (2012), 1066–1071 |
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A. E. Belyaev, N. I. Klyui, R. V. Konakova, A. N. Lukyanov, B. A. Danil'chenko, Yu. N. Sveshnikov, A. N. Klyui, “Electroreflectance study of the effect of $\gamma$ radiation on the optical properties of epitaxial GaN films”, Fizika i Tekhnika Poluprovodnikov, 46:3 (2012), 317–320 ; Semiconductors, 46:3 (2012), 302–305 |
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