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Publications in Math-Net.Ru |
Citations |
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2024 |
| 1. |
D. S. Arteev, A. V. Sakharov, A. E. Nikolaev, A. F. Tsatsul'nikov, N. A. Cherkashin, “Heterostructures with two-dimensional electron gas based on GaN with InAlN/AlGaN barrier”, Fizika i Tekhnika Poluprovodnikov, 58:10 (2024), 582–585   |
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2021 |
| 2. |
N. A. Cherkashin, A. V. Sakharov, A. E. Nikolaev, V. V. Lundin, S. O. Usov, V. M. Ustinov, A. S. Grashchenko, S. A. Kukushkin, A. V. Osipov, A. F. Tsatsul'nikov, “Peculiarities of epitaxial growth of III – N led heterostructures on SiC/Si substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:15 (2021), 15–18 ; Tech. Phys. Lett., 47:10 (2021), 753–756 |
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2019 |
| 3. |
A. M. Nadtochiy, Yu. M. Shernyakov, M. M. Kulagina, A. S. Payusov, N. Yu. Gordeev, M. V. Maksimov, A. E. Zhukov, T. Denneulin, N. Cherkashin, V. A. Shchukin, N. N. Ledentsov, “InGaAlP/GaAs injection lasers of orangeoptical range ($\sim$600nm)”, Fizika i Tekhnika Poluprovodnikov, 53:12 (2019), 1708–1713 ; Semiconductors, 53:12 (2019), 1699–1704 |
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2016 |
| 4. |
A. F. Tsatsul'nikov, V. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, A. E. Nikolaev, M. A. Yagovkina, V. M. Ustinov, N. A. Cherkashin, “Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1263–1269 ; Semiconductors, 50:9 (2016), 1241–1247 |
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| 5. |
V. G. Tikhomirov, V. E. Zemlyakov, V. V. Volkov, Ya. M. Parnes, V. N. V’yuginov, V. V. Lundin, A. V. Sakharov, E. E. Zavarin, A. F. Tsatsul'nikov, N. A. Cherkashin, M. N. Mizerov, V. M. Ustinov, “Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 245–249 ; Semiconductors, 50:2 (2016), 244–248 |
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2015 |
| 6. |
A. F. Tsatsul'nikov, V. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, A. E. Nikolaev, M. A. Sinicin, N. A. Cherkashin, S. Yu. Karpov, “Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency”, Fizika i Tekhnika Poluprovodnikov, 49:11 (2015), 1563–1568 ; Semiconductors, 49:11 (2015), 1516–1521 |
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2014 |
| 7. |
V. V. Lundin, A. E. Nikolaev, A. V. Sakharov, S. O. Usov, E. E. Zavarin, P. N. Brunkov, M. A. Yagovkina, N. A. Cherkashin, A. F. Tsatsul'nikov, “Dependence of the efficiency of III–N blue LEDs on the structural perfection of GaN epitaxial buffer layers”, Fizika i Tekhnika Poluprovodnikov, 48:1 (2014), 55–60 ; Semiconductors, 48:1 (2014), 53–57 |
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2012 |
| 8. |
A. F. Tsatsul'nikov, V. V. Lundin, E. E. Zavarin, A. V. Sakharov, Yu. G. Musikhin, S. O. Usov, M. N. Mizerov, N. A. Cherkashin, “InGaN/GaN heterostructures grown by submonolayer deposition”, Fizika i Tekhnika Poluprovodnikov, 46:10 (2012), 1357–1362 ; Semiconductors, 46:10 (2012), 1335–1340 |
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| 9. |
A. F. Tsatsul'nikov, V. V. Lundin, E. E. Zavarin, A. E. Nikolaev, A. V. Sakharov, M. M. Rozhavskaya, S. O. Usov, P. N. Brunkov, M. A. Sinicin, D. V. Davydov, M. N. Mizerov, N. A. Cherkashin, “Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region”, Fizika i Tekhnika Poluprovodnikov, 46:10 (2012), 1304–1308 ; Semiconductors, 46:10 (2012), 1281–1285 |
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2007 |
| 10. |
R. I. Khaibullin, L. R. Tagirov, Sh. Z. Ibragimov, V. F. Valeev, V. I. Nuzhdin, Yu. N. Osin, A. A. Achkeev, I. A. Faizrakhmanov, N. A. Cherkashin, “Ferromagnetism and two magnetic phases in rutile (TiO$_2$) implanted by cobalt ions”, Kazan. Gos. Univ. Uchen. Zap. Ser. Fiz.-Mat. Nauki, 149:3 (2007), 31–41 |
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