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Publications in Math-Net.Ru |
Citations |
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2024 |
| 1. |
V. G. Mansurov, T. V. Malin, D. D. Bashkatov, D. S. Milakhin, K. S. Zhuravlev, “Chemical kinetics of the Si(111) surface nitridation process at temperatures below the structural phase transition (7$\times$7)$\to$(1$\times$1)”, Fizika i Tekhnika Poluprovodnikov, 58:7 (2024), 349–357   |
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2022 |
| 2. |
D. S. Milakhin, T. V. Malin, V. G. Mansurov, A. S. Kozhukhov, N. N. Novikova, V. A. Yakovlev, K. S. Zhuravlev, “Determination of the AlN nucleation layer thickness formed on the Al$_2$O$_3$ (0001) surface during nitridation process
by XPS and IR spectroscopy”, Fizika i Tekhnika Poluprovodnikov, 56:8 (2022), 734–741 |
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2019 |
| 3. |
D. S. Milakhin, T. V. Malin, V. G. Mansurov, Yu. G. Galitsyn, A. S. Kozhukhov, I. A. Aleksandrov, N. V. Rzheutskii, E. V. Lebiadok, A. A. Razumets, K. S. Zhuravlev, “Forming the GaN nanocrystals on the graphene-like $g$-AlN and $g$-Si$_{3}$N$_{3}$ surface”, Fizika Tverdogo Tela, 61:12 (2019), 2327–2332 ; Phys. Solid State, 61:12 (2019), 2329–2334 |
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| 4. |
T. V. Malin, D. S. Milakhin, I. A. Aleksandrov, V. E. Zemlyakov, V. I. Egorkin, A. A. Zaitsev, D. Yu. Protasov, A. S. Kozhukhov, B. Ya. Ber, D. Yu. Kazantsev, V. G. Mansurov, K. S. Zhuravlev, “Undoped high-resistance GaN buffer layer for AlGaN/GaN high-electron-mobility transistors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:15 (2019), 21–24 ; Tech. Phys. Lett., 45:8 (2019), 761–764 |
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2018 |
| 5. |
V. G. Mansurov, Yu. G. Galitsyn, T. V. Malin, S. A. Teys, E. V. Fedosenko, A. S. Kozhukhov, K. S. Zhuravlev, Ildikó Cora, Béla Pécz, “Formation of a graphene-like SiN layer on the surface Si(111)”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1407–1413 ; Semiconductors, 52:12 (2018), 1511–1517 |
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| 6. |
T. V. Malin, D. S. Milakhin, V. G. Mansurov, Yu. G. Galitsyn, A. S. Kozhukhov, V. V. Ratnikov, A. N. Smirnov, V. Yu. Davydov, K. S. Zhuravlev, “Effect of the sapphire-nitridation level and nucleation-layer enrichment with aluminum on the structural properties of AlN layers”, Fizika i Tekhnika Poluprovodnikov, 52:6 (2018), 643–650 ; Semiconductors, 52:6 (2018), 789–796 |
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2017 |
| 7. |
K. S. Zhuravlev, T. V. Malin, V. G. Mansurov, O. E. Tereshchenko, K. K. Abgaryan, D. L. Reviznikov, V. E. Zemlyakov, V. I. Egorkin, Ya. M. Parnes, V. G. Tikhomirov, I. P. Prosvirin, “AlN/GaN heterostructures for normally-off transistors”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 395–402 ; Semiconductors, 51:3 (2017), 379–386 |
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2016 |
| 8. |
I. A. Aleksandrov, V. G. Mansurov, K. S. Zhuravlev, “Photoluminescence kinetics slowdown in an ensemble of GaN/AlN quantum dots upon tunneling interaction with defects”, Fizika i Tekhnika Poluprovodnikov, 50:8 (2016), 1059–1063 ; Semiconductors, 50:8 (2016), 1038–1042 |
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| 9. |
I. A. Aleksandrov, K. S. Zhuravlev, V. G. Mansurov, “Influence of defects on the photoluminescence kinetics in GaN/AlN quantum-dot structures”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 191–194 ; Semiconductors, 50:2 (2016), 191–194 |
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| 10. |
K. S. Zhuravlev, T. V. Malin, V. G. Mansurov, V. E. Zemlyakov, V. I. Egorkin, Ya. M. Parnes, “Normally off transistors based on in situ passivated AlN/GaN heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:14 (2016), 72–79 ; Tech. Phys. Lett., 42:7 (2016), 750–753 |
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2015 |
| 11. |
T. V. Malin, A. M. Gilinskii, V. G. Mansurov, D. Yu. Protasov, A. K. Shestakov, E. B. Yakimov, K. S. Zhuravlev, “MBE-grown AlGaN/GaN heterostructures for UV photodetectors”, Zhurnal Tekhnicheskoi Fiziki, 85:4 (2015), 67–73 ; Tech. Phys., 60:3 (2015), 546–552 |
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| 12. |
T. V. Malin, A. M. Gilinskii, V. G. Mansurov, D. Yu. Protasov, A. S. Kozhukhov, E. B. Yakimov, K. S. Zhuravlev, “Increase in the diffusion length of minority carriers in Al$_x$Ga$_{1-x}$N ($x$ = 0–0.1) fabricated by ammonia molecular beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 49:10 (2015), 1329–1334 ; Semiconductors, 49:10 (2015), 1285–1289 |
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| 13. |
D. S. Milakhin, T. V. Malin, V. G. Mansurov, Yu. G. Galitsyn, K. S. Zhuravlev, “Nitridation of an unreconstructed and reconstructed $(\sqrt{31}\times\sqrt{31})R\pm9^\circ$ (0001) sapphire surface in an ammonia flow”, Fizika i Tekhnika Poluprovodnikov, 49:7 (2015), 925–931 ; Semiconductors, 49:7 (2015), 905–910 |
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2010 |
| 14. |
I. A. Aleksandrov, K. S. Zhuravlev, V. G. Mansurov, P. Holtz, “Linearly polarized photoluminescence from an ensemble of wurtzite GaN/AlN quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 91:9 (2010), 498–500 ; JETP Letters, 91:9 (2010), 452–454   |
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2007 |
| 15. |
Yu. G. Galitsyn, D. V. Dmitriev, V. G. Mansurov, S. P. Moshchenko, A. I. Toropov, “Role of lateral interaction in the homoepitaxy of GaAs on the (001)-$\beta(2\times 4)$ surface”, Pis'ma v Zh. Èksper. Teoret. Fiz., 86:7 (2007), 553–557 ; JETP Letters, 86:7 (2007), 482–486 |
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2006 |
| 16. |
Yu. G. Galitsyn, D. V. Dmitriev, V. G. Mansurov, S. P. Moshchenko, A. I. Toropov, “Asymmetric <i>c</i>(4×4) → γ(2×4) reconstruction phase transition on the (001)GaAs surface”, Pis'ma v Zh. Èksper. Teoret. Fiz., 84:9 (2006), 596–600 ; JETP Letters, 84:9 (2006), 505–508 |
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2005 |
| 17. |
Yu. G. Galitsyn, D. V. Dmitriev, V. G. Mansurov, S. P. Moshchenko, A. I. Toropov, “Critical phenomena in the β-(2×4) → α-(2×4) reconstruction transition on the (001) GaAs surface”, Pis'ma v Zh. Èksper. Teoret. Fiz., 81:12 (2005), 766–770 ; JETP Letters, 81:12 (2005), 629–633 |
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| 18. |
D. D. Ri, V. G. Mansurov, A. Yu. Nikitin, A. K. Gutakovskii, K. S. Zhuravlev, P. Tronc, “Photoluminescence kinetics of wurtzite GaN quantum dots in an AlN matrix”, Pis'ma v Zh. Èksper. Teoret. Fiz., 81:2 (2005), 70–73 ; JETP Letters, 81:2 (2005), 62–65 |
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1995 |
| 19. |
A. A. Bykov, Z. D. Kvon, E. B. Ol'shanskii, A. L. Aseev, M. R. Baklanov, L. V. Litvin, Yu. V. Nastaushev, V. G. Mansurov, V. P. Migal', S. P. Moshchenko, “Quasiballistic quantum interferometer”, UFN, 165:2 (1995), 227–229 ; Phys. Usp., 38:2 (1995), 217–219 |
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