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Publications in Math-Net.Ru |
Citations |
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2022 |
| 1. |
A. E. Klimov, V. A. Golyashov, D. V. Gorshkov, E. V. Matyushenko, I. G. Neizvestnyi, G. Yu. Sidorov, N. S. Pschin, S. P. Suprun, O. E. Tereshchenko, “MIS transistor based on PbSnTe : In film with an Al$_2$O$_3$ gate dielectric”, Fizika i Tekhnika Poluprovodnikov, 56:2 (2022), 243–249   |
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2020 |
| 2. |
A. E. Klimov, A. N. Akimov, I. O. Akhundov, V. A. Golyashov, D. V. Gorshkov, D. V. Ishchenko, E. V. Matyushenko, I. G. Neizvestnyi, G. Yu. Sidorov, S. P. Suprun, A. S. Tarasov, O. E. Tereshchenko, V. S. Epov, “Features of MIS structures based on insulating PbSnTe:In films with the composition in the vicinity of the band inversion related to their ferroelectric properties”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1122–1128 ; Semiconductors, 54:10 (2020), 1325–1331 |
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| 3. |
A. N. Akimov, I. O. Akhundov, D. V. Ishchenko, A. E. Klimov, I. G. Neizvestnyi, N. S. Pschin, S. P. Suprun, A. S. Tarasov, O. E. Tereshchenko, E. V. Fedosenko, V. N. Sherstyakova, “Sign-alternating photoconductivity in PbSnTe : In films in the space-charge-limited current regime”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 796–800 ; Semiconductors, 54:8 (2020), 951–955 |
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2018 |
| 4. |
D. V. Ishchenko, I. G. Neizvestnyi, “Radiative recombination, carrier capture at traps, and photocurrent relaxation in PbSnTe : In with a composition close to band inversion”, Fizika i Tekhnika Poluprovodnikov, 52:7 (2018), 694–698 ; Semiconductors, 52:7 (2018), 836–839 |
| 5. |
A. G. Nastovjak, I. G. Neizvestny, M. A. Vasilenko, N. L. Shwartz, “Concentric GaAs nanorings growth modelling”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 520 ; Semiconductors, 52:5 (2018), 639–644 |
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2016 |
| 6. |
A. N. Akimov, A. E. Klimov, I. G. Neizvestnyi, V. N. Shumskii, V. S. Epov, “Specific temperature-related features of photoconductivity relaxation in PbSnTe:In films under interband excitation”, Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 447–453 ; Semiconductors, 50:4 (2016), 440–446 |
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2015 |
| 7. |
M. V. Knyazeva, A. G. Nastovjak, I. G. Neizvestnyi, N. L. Shwartz, “Simulated growth of GaAs nanowires: Catalytic and self-catalyzed growth”, Fizika i Tekhnika Poluprovodnikov, 49:1 (2015), 63–70 ; Semiconductors, 49:1 (2015), 60–68 |
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| 8. |
I. G. Neizvestnyi, A. E. Klimov, V. N. Shumsky, “Photon far-infrared and submillimeter array detectors”, UFN, 185:10 (2015), 1031–1042 ; Phys. Usp., 58:10 (2015), 952–962   |
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2014 |
| 9. |
E. A. Mikhantiev, I. G. Neizvestnyi, S. V. Usenkov, N. L. Shwartz, “Monte Carlo simulation of the effect of silicon monoxide on silicon-nanocluster formation”, Fizika i Tekhnika Poluprovodnikov, 48:7 (2014), 917–925 ; Semiconductors, 48:7 (2014), 891–898 |
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2003 |
| 10. |
I. A. Litvinova, I. G. Neizvestnyi, A. V. Prozorov, S. P. Suprun, V. N. Sherstyakova, V. N. Shumskii, “Charge accumulation in Ge quantum dots in a GaAs/ZnSe/QD-Ge/ZnSe/Ge floating gate transistor structure”, Pis'ma v Zh. Èksper. Teoret. Fiz., 78:12 (2003), 1289–1292 ; JETP Letters, 78:12 (2003), 768–771 |
| 11. |
I. Yu. Borodin, I. A. Litvinova, I. G. Neizvestnyi, A. V. Prozorov, S. P. Suprun, A. B. Talochkin, V. N. Sherstyakova, V. N. Shumskii, “Electric and photoelectric properties of GaAs/ZnSe–Ge/ZnSe/Al structures with Ge quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 78:3 (2003), 184–187 ; JETP Letters, 78:3 (2003), 152–155 |
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1991 |
| 12. |
A. B. Talochkin, V. A. Markov, I. G. Neizvestnyi, O. P. Pchelyakov, M. P. Sinyukov, S. I. Stenin, “Quantization of optical phonon spectrum in $\mathrm{Si}$–$\mathrm{Si}_{0.5}\mathrm{Ge}_{0.5}$ superlattices”, Fizika Tverdogo Tela, 33:6 (1991), 1695–1698 |
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1989 |
| 13. |
O. A. Makarov, I. G. Neizvestnyi, M. P. Sinyukov, “Valence and core electron coupling in semiconductors”, Fizika Tverdogo Tela, 31:12 (1989), 32–36 |
| 14. |
V. A. Gaisler, O. A. Kuznetsov, I. G. Neizvestnyi, L. K. Orlov, M. P. Sinyukov, A. B. Talochkin, “Raman light scattering from local vibrations in $\mathrm{Ge}_{1-x}\mathrm{Si}_{x}$ solid solutions”, Fizika Tverdogo Tela, 31:11 (1989), 292–297 |
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1988 |
| 15. |
V. A. Gaisler, I. G. Neizvestnyi, M. P. Sinyukov, A. B. Talochkin, “Optical phonon anharmonism near germanium surface”, Fizika Tverdogo Tela, 30:3 (1988), 806–809 |
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1987 |
| 16. |
I. G. Neizvestnyi, I. K. Olzoev, A. M. Palkin, O. A. Shegai, “Magnetoresonant oscillations of photomagnetic effect in $n$-$\mathrm{Ge}$”, Fizika Tverdogo Tela, 29:2 (1987), 570–572 |
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1986 |
| 17. |
I. G. Neizvestnyi, Yu. A. Pusep, M. P. Sinyukov, “Lattice vibration-induced localization effects”, Fizika Tverdogo Tela, 28:10 (1986), 3197–3200 |
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1985 |
| 18. |
Z. D. Kvon, I. G. Neizvestnyi, V. N. Ovsyuk, “Effect of a surface superlattice on a two-dimensional electron gas”, UFN, 146:2 (1985), 353–355 ; Phys. Usp., 28:6 (1985), 528–530 |
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1984 |
| 19. |
I. G. Neizvestnyi, Yu. A. Pusep, M. P. Sinyukov, “On application of a six-band model to dispersion relation calculation of $\mathrm{Pb}_{1-x}\mathrm{Sn}_{x}\mathrm{Te}$ compounds”, Fizika Tverdogo Tela, 26:6 (1984), 1875–1877 |
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2012 |
| 20. |
A. L. Aseev, A. V. Dvurechenskii, I. G. Neizvestnyi, G. A. Kachurin, V. P. Popov, A. A. Gippius, V. N. Mordkovich, “Леонид Степанович Смирнов к 80-летию со дня рождения (1932–2011)”, Fizika i Tekhnika Poluprovodnikov, 46:6 (2012), 861–863 |
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2011 |
| 21. |
V. B. Betelin, E. P. Velikhov, Yu. V. Gulyaev, A. A. Kokin, Yu. V. Kopaev, G. Ya. Krasnikov, F. A. Kuznetsov, V. F. Lukichev, I. G. Neizvestnyi, A. A. Orlikovsky, A. V. Rakov, Yu. A. Chaplygin, “In memory of Kamil' Akhmetovich Valiev”, UFN, 181:5 (2011), 557–558 ; Phys. Usp., 54:5 (2011), 533–534 |
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