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Publications in Math-Net.Ru |
Citations |
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2018 |
| 1. |
N. N. Gerasimenko, N. S. Balakleyskiy, A. D. Volokhovskiy, D. I. Smirnov, O. A. Zaporozhan, “Ion synthesis: Si–Ge quantum dots”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 516   ; Semiconductors, 52:5 (2018), 625–627 |
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2014 |
| 2. |
N. N. Gerasimenko, K. B. Tynyshtykbaev, V. V. Starkov, N. A. Medetov, S. Zh. Tokmoldin, E. A. Gosteva, “On the nature of cracks using single-crystalline silicon subjected to anodic etching as an example”, Fizika i Tekhnika Poluprovodnikov, 48:8 (2014), 1117–1122 ; Semiconductors, 48:8 (2014), 1088–1093 |
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2013 |
| 3. |
D. I. Smirnov, R. M. Giniyatyllin, I. Yu. Zyul’kov, N. A. Medetov, N. N. Gerasimenko, “Problems in measurements of parameters of elements and structures in modern micro- and nanoelectronics considering TiN/Ti diffusion barrier structures as an example”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:14 (2013), 34–42 ; Tech. Phys. Lett., 39:7 (2013), 640–643 |
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1992 |
| 4. |
N. N. Gerasimenko, A. M. Myasnikov, V. I. Obodnikov, L. N. Safronov, “Magnesium redistribution in InAs under postimplantation annealing”, Fizika i Tekhnika Poluprovodnikov, 26:9 (1992), 1651–1653 |
| 5. |
I. B. Chistokhin, E. G. Tishkovskiy, N. N. Gerasimenko, “Current instabilities in photoresistance based on selenium-doped silicon”, Fizika i Tekhnika Poluprovodnikov, 26:9 (1992), 1529–1535 |
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1987 |
| 6. |
S. V. Vasil'ev, N. N. Gerasimenko, V. V. Kalinin, “Structural reorganization, induced by silicide formation in ion-irradiated silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:20 (1987), 1242–1247 |
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1977 |
| 7. |
N. N. Gerasimenko, V. G. Pan'kin, K. K. Svitashev, S. A. Sokolov, G. M. Tseĭtlin, “Investigation of waveguide structures formed by irradiation of fused quartz with hydrogen ions”, Kvantovaya Elektronika, 4:6 (1977), 1372–1375 [Sov J Quantum Electron, 7:6 (1977), 778–780] |
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