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Publications in Math-Net.Ru |
Citations |
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2022 |
| 1. |
Kh. F. Zikrillayev, K. S. Ayupov, G. Kh. Mavlonov, A. A. Usmonov, M. M. Shoabduraximova, “Features of the electrophysical parameters of silicon serially doped with impurity atoms of phosphorus and boron”, Fizika i Tekhnika Poluprovodnikov, 56:6 (2022), 528–532   |
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2021 |
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M. K. Bakhadyrkhanov, H. M. Iliev, G. Kh. Mavlonov, Sh. N. Ibodullaev, S. A. Tachilin, “The effect of negative magnetoresistance in silicon to create multifunctional sensors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:19 (2021), 7–11 ; Tech. Phys. Lett., 48:1 (2022), 1–4 |
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2019 |
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M. K. Bakhadyrkhanov, H. M. Iliev, G. Kh. Mavlonov, K. S. Ayupov, S. B. Isamov, S. A. Tachilin, “Silicon with magnetic nanoclusters of manganese atoms as a new ferromagnetic material”, Zhurnal Tekhnicheskoi Fiziki, 89:3 (2019), 421–425 ; Tech. Phys., 64:3 (2019), 385–388 |
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2014 |
| 4. |
M. K. Bakhadyrkhanov, G. Kh. Mavlonov, H. M. Iliev, “Control of the magnetic properties of silicon with manganese atom nanoclusters”, Zhurnal Tekhnicheskoi Fiziki, 84:10 (2014), 139–141 ; Tech. Phys., 59:10 (2014), 1556–1558 |
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M. K. Bakhadyrkhanov, G. Kh. Mavlonov, H. M. Iliev, K. S. Ayupov, O. E. Sattarov, S. A. Tachilin, “Specific features of magnetoresistance in overcompensated manganese-doped silicon”, Fizika i Tekhnika Poluprovodnikov, 48:8 (2014), 1014–1016 ; Semiconductors, 48:8 (2014), 986–988 |
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