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Pashaev, Islam Gerai ogly
Pashaev, Islam Gerai ogly
Associate professor
Candidate of physico-mathematical sciences (1990)
Birth date: 1.03.1957
E-mail:
Keywords: relaxation of the excess current, restored enie, interface, Schottky diodes, ultrasound exposure, photosensitivity, silicon solar cells.
UDC: 621.382

Subject:

Effect of microstructure of different metal layers on the electrical properties of Schottky diodes based on silicon.

https://www.mathnet.ru/eng/person72680
List of publications on Google Scholar

Publications in Math-Net.Ru Citations
2014
1. I. G. Pashaev, “Study of the relaxation of the excess current in silicon Schottky diodes”, Fizika i Tekhnika Poluprovodnikov, 48:10 (2014),  1426–1429  mathnet  elib; Semiconductors, 48:10 (2014), 1391–1394 2
2013
2. I. G. Pashaev, “Electrical properties of silicon Schottky diodes containing metal films of various compositions”, Fizika i Tekhnika Poluprovodnikov, 47:6 (2013),  761–764  mathnet  elib; Semiconductors, 47:6 (2013), 771–774 2
2012
3. I. G. Pashaev, “Effect of various treatments on Schottky diode properties”, Fizika i Tekhnika Poluprovodnikov, 46:8 (2012),  1108–1110  mathnet  elib; Semiconductors, 46:8 (2012), 1085–1087 6

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