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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
A. Lazarenko, K. Yu. Shubina, E. V. Nikitina, E. V. Pirogov, A. M. Mizerov, M. S. Sobolev, “Influence of rapid thermal annealing on the distribution of nitrogen atoms in GaAsN/GaAs”, Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 1077–1080   |
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2017 |
| 2. |
A. Lazarenko, K. A. Ivanov, A. R. Gubaidullin, M. A. Kaliteevskii, “Optimization of vertical cavity lasers with intracavity metal layers”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 547–550 ; Semiconductors, 51:4 (2017), 520–523 |
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| 3. |
N. V. Kryzhanovskaya, Yu. S. Polubavkina, V. N. Nevedomskiy, E. V. Nikitina, A. Lazarenko, A. Yu. Egorov, M. V. Maksimov, È. I. Moiseev, A. E. Zhukov, “Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4$^\circ$ substrates”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 276–280 ; Semiconductors, 51:2 (2017), 267–271 |
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| 4. |
E. V. Nikitina, A. Lazarenko, E. V. Pirogov, M. S. Sobolev, T. N. Berezovskaya, “The influence of metamorphic-buffer layer design on the retention of characteristics of InGaAs/GaAs metamorphic HEMT”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:18 (2017), 97–102 ; Tech. Phys. Lett., 43:9 (2017), 863–865 |
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2016 |
| 5. |
E. V. Nikitina, A. S. Gudovskikh, A. Lazarenko, E. V. Pirogov, M. S. Sobolev, K. S. Zelentsov, I. A. Morozov, A. Yu. Egorov, “GaAs/InGaAsN heterostructures for multi-junction solar cells”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 663–667 ; Semiconductors, 50:5 (2016), 652–655 |
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| 6. |
A. Lazarenko, E. V. Nikitina, E. V. Pirogov, M. S. Sobolev, A. Yu. Egorov, “The influence of an In$_{0.52}$Al$_{0.48}$As transition layer design on the transport characteristics of a metamorphic high-electron-mobility transistor”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:6 (2016), 14–19 ; Tech. Phys. Lett., 42:3 (2016), 284–286 |
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2015 |
| 7. |
M. S. Sobolev, A. Lazarenko, E. V. Nikitina, E. V. Pirogov, A. S. Gudovskikh, A. Yu. Egorov, “MBE growth of GaP on a Si substrate”, Fizika i Tekhnika Poluprovodnikov, 49:4 (2015), 569–572 ; Semiconductors, 49:4 (2015), 559–562 |
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| 8. |
A. Lazarenko, E. V. Nikitina, M. S. Sobolev, E. V. Pirogov, D. V. Denisov, A. Yu. Egorov, “Photoluminescence of heterostructures with GaP$_{1-x}$N$_x$ and GaP$_{1-x-y}$N$_x$As$_y$ layers grown on GaP and Si substrates by molecular-beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 49:4 (2015), 489–493 ; Semiconductors, 49:4 (2015), 479–482 |
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| 9. |
M. È. Sasin, N. D. Il'inskaya, Yu. M. Zadiranov, N. A. Kaliteevskaya, A. Lazarenko, V. A. Mazlin, P. N. Brunkov, S. I. Pavlov, M. A. Kaliteevskii, “Cylindrical multilayer metal–dielectric structures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:22 (2015), 61–65 ; Tech. Phys. Lett., 41:11 (2015), 1097–1098 |
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2014 |
| 10. |
A. Yu. Egorov, P. N. Brunkov, E. V. Nikitina, E. V. Pirogov, M. S. Sobolev, A. Lazarenko, M. V. Baidakova, D. A. Kirilenko, S. G. Konnikov, “Multiperiod quantum-cascade nanoheterostructures: Epitaxy and diagnostics”, Fizika i Tekhnika Poluprovodnikov, 48:12 (2014), 1640–1645 ; Semiconductors, 48:12 (2014), 1600–1604 |
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| 11. |
A. V. Babichev, A. Lazarenko, E. V. Nikitina, E. V. Pirogov, M. S. Sobolev, A. Yu. Egorov, “Ultra-wide electroluminescence spectrum of LED heterostructures based on GaPAsN semiconductor alloys”, Fizika i Tekhnika Poluprovodnikov, 48:4 (2014), 518–522 ; Semiconductors, 48:4 (2014), 501–504 |
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| 12. |
A. Lazarenko, E. V. Nikitina, E. V. Pirogov, M. S. Sobolev, A. Yu. Egorov, “Molecular beam epitaxy of GaPN, GaPAsN, and InGaPN nitride solid solutions”, Fizika i Tekhnika Poluprovodnikov, 48:3 (2014), 407–411 ; Semiconductors, 48:3 (2014), 392–396 |
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2013 |
| 13. |
M. A. Kaliteevskii, A. Lazarenko, “Reduced absorption of light by metallic intra-cavity contacts: Tamm plasmon based laser mode engineering”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:15 (2013), 64–71 ; Tech. Phys. Lett., 39:8 (2013), 698–701 |
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