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Publications in Math-Net.Ru |
Citations |
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2025 |
| 1. |
N. M. Shmidt, A. S. Usikov, S. V. Vorobyev, A. Yu. Plekhanov, I. K. Ternovych, A. D. Roenkov, M. V. Puzyk, E. I. Shabunina, E. V. Gushchina, S. P. Lebedev, A. A. Lebedev, A. N. Smirnov, S. Yu. Priobrazhenskii, E. M. Tanklevskaya, “Graphene-based biosensors for neurodegenerative dementia detection”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:3 (2025), 13–16 |
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2023 |
| 2. |
I. A. Eliseyev, A. S. Usikov, A. D. Roenkov, S. P. Lebedev, V. N. Petrov, A. N. Smirnov, A. A. Lebedev, E. V. Gushchina, E. M. Tanklevskaya, E. I. Shabunina, M. V. Puzyk, N. M. Shmidt, “Study of stress relief and strain distribution in graphene films of biosensors for viral infections”, Fizika Tverdogo Tela, 65:12 (2023), 2216–2219 |
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2022 |
| 3. |
A. Yu. Plekhanov, M. V. Puzyk, A. S. Usikov, A. D. Roenkov, A. A. Lebedev, S. P. Lebedev, S. A. Klotchenko, A. V. Vasin, Yu. N. Makarov, “Chemiluminescence of a functionalized graphene surface”, Optics and Spectroscopy, 130:9 (2022), 1417–1422 |
| 4. |
I. A. Eliseyev, E. A. Gushchina, S. A. Klotchenko, A. A. Lebedev, N. M. Lebedeva, S. P. Lebedev, A. V. Nashchekin, V. N. Petrov, M. V. Puzyk, A. D. Roenkov, A. N. Smirnov, E. M. Tanklevskaya, A. S. Usikov, E. I. Shabunina, N. M. Shmidt, “Modification in adsorption properties of graphene during the development of viral biosensors”, Fizika i Tekhnika Poluprovodnikov, 56:12 (2022), 1137–1143 |
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2020 |
| 5. |
A. S. Usikov, S. P. Lebedev, A. D. Roenkov, I. S. Barash, S. V. Novikov, M. V. Puzyk, A. V. Zubov, Yu. N. Makarov, A. A. Lebedev, “Studying the sensitivity of graphene for biosensor applications”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:10 (2020), 3–6 ; Tech. Phys. Lett., 46:5 (2020), 462–465 |
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2015 |
| 6. |
A. A. Lebedev, S. V. Belov, M. G. Mynbaeva, A. M. Strel'chuk, E. V. Bogdanova, Yu. N. Makarov, A. S. Usikov, S. Yu. Kurin, I. S. Barash, A. D. Roenkov, V. V. Kozlovsky, “Radiation hardness of $n$-GaN Schottky diodes”, Fizika i Tekhnika Poluprovodnikov, 49:10 (2015), 1386–1388 ; Semiconductors, 49:10 (2015), 1341–1343 |
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2014 |
| 7. |
A. V. Solomonov, S. A. Tarasov, E. A. Men'kovich, I. A. Lamkin, S. Yu. Kurin, A. A. Antipov, I. S. Barash, A. D. Roenkov, H. Helava, Yu. N. Makarov, “Study of the characteristics of ultraviolet light-emitting diodes based on GaN/AlGaN heterostructures grown by chloride-hydride vapor-phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 48:2 (2014), 259–264 ; Semiconductors, 48:2 (2014), 245–250 |
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| 8. |
N. M. Shmidt, A. S. Usikov, E. I. Shabunina, A. E. Chernyakov, A. V. Sakharov, S. Yu. Kurin, A. A. Antipov, I. S. Barash, A. D. Roenkov, Yu. N. Makarov, H. Helava, “Study of the degradation of the external quantum efficiency of UV LEDs based on AlGaN/GaN heterostructures grown by chloride-hydride vapor-phase epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:13 (2014), 73–80 ; Tech. Phys. Lett., 40:7 (2014), 574–577 |
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1992 |
| 9. |
Yu. A. Vodakov, A. I. Girka, A. O. Konstantinov, E. N. Mokhov, A. D. Roenkov, S. V. Svirida, V. V. Semenov, V. I. Sokolov, A. V. Shishkin, “Light-emmiting diodes based on silicon carbide irradiated by fast electrons”, Fizika i Tekhnika Poluprovodnikov, 26:11 (1992), 1857–1860 |
| 10. |
R. G. Verenchikova, Yu. A. Vodakov, D. P. Litvin, E. N. Mokhov, A. D. Roenkov, V. I. Sankin, “Ultraviolet silicon-carbide photodetectors”, Fizika i Tekhnika Poluprovodnikov, 26:6 (1992), 1008–1014 |
| 11. |
Yu. A. Vodakov, A. A. Vol'fson, G. V. Zaritsky, E. N. Mokhov, A. G. Ostroumov, A. D. Roenkov, V. V. Semenov, V. I. Sokolov, V. A. Syralev, V. E. Udal'tsov, “Effective green light-emitting diodes on silicon carbide”, Fizika i Tekhnika Poluprovodnikov, 26:1 (1992), 107–110 |
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1991 |
| 12. |
V. A. Vaschenko, Yu. A. Vodakov, V. V. Gafjjchuk, B. I. Datsko, B. S. Kerner, D. P. Litvin, V. V. Osipov, A. D. Roenkov, V. I. Sankin, “Образование и эволюция нитей лавинного тока в обратносмещенных
$p{-}n$-переходах на основе $6H$-SiC”, Fizika i Tekhnika Poluprovodnikov, 25:7 (1991), 1209–1216 |
| 13. |
V. S. Vavilov, Yu. A. Vodakov, A. I. Ivanov, E. N. Mokhov, A. D. Roenkov, M. V. Chukichev, R. G. Verenchikova, “Люминесценция эпитаксиальных слоев $6H$-SiC, облученных быстрыми
электронами”, Fizika i Tekhnika Poluprovodnikov, 25:4 (1991), 762–766 |
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1990 |
| 14. |
E. N. Mokhov, M. G. Ramm, A. D. Roenkov, M. I. Fedorov, R. G. Verenchikova, “NITROGEN ALLOYING OF SIC EPITAXIAL LAYERS UNDER THE SUBLIMATION
SANDWICH-METHOD GROWTH IN VACUUM”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:14 (1990), 33–37 |
| 15. |
Yu. A. Vodakov, E. N. Mokhov, A. D. Roenkov, V. V. Semenov, V. I. Sokolov, R. G. Verenchikova, A. O. Konstantinov, V. G. Oding, “ELECTROLUMINESCENCE OF 6H-SIC, ALLOYED BY GA AND N”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:14 (1990), 25–30 |
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1988 |
| 16. |
A. S. Barash, Yu. A. Vodakov, E. N. Koltsova, A. A. Mal'tsev, E. N. Mokhov, A. D. Roenkov, “PHOTODIODES WITH EMISSION IN THE GREEN AREA OF SPECTRUM BASED ON
HETEROEPITAXIAL LAYERS OF SILICON-CARBIDE OF 4H-POLYTYPE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:24 (1988), 2222–2226 |
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1987 |
| 17. |
D. P. Litvin, A. A. Mal'tsev, A. V. Naumov, A. D. Roenkov, V. I. Sankin, “$P^{+}-\pi-N^{+}$-structures based on silicon-carbide with double injection”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:20 (1987), 1247–1251 |
| 18. |
E. N. Mokhov, M. G. Ramm, A. D. Roenkov, A. A. Vol'fson, A. S. Tregubova, I. L. Shul'pina, “Origination of structural ruptures in epitaxial layers of silicon-carbide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:11 (1987), 641–645 |
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1986 |
| 19. |
S. A. Poltinnikov, Yu. A. Vodakov, G. A. Lomakina, E. N. Mokhov, V. V. Semenov, A. D. Roenkov, “Parametric voltage stabilizer based on silicon-carbide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:5 (1986), 261–264 |
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1985 |
| 20. |
Yu. A. Vodakov, D. P. Litvin, V. I. Sankin, E. N. Mokhov, A. D. Roenkov, “Collision Ionization in Silicon-Carbide Polytypes”, Fizika i Tekhnika Poluprovodnikov, 19:5 (1985), 814–818 |
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1984 |
| 21. |
Yu. A. Vodakov, D. P. Litvin, V. I. Sankin, E. N. Mokhov, A. D. Roenkov, “CHARACTERISTICS OF CASCADE BREAKDOWN IN ALPHA-CARBIDE SILICON-MATERIAL
WITH NATURAL SUPER-LATTICE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:5 (1984), 303–306 |
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