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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
Ya. V. Levitskii, M. I. Mitrofanov, G. V. Voznyuk, D. N. Nikolaev, M. N. Mizerov, V. P. Evtikhiev, “Changes in the photoluminescence properties of semiconductor heterostructures after ion-beam etching”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1579–1583   ; Semiconductors, 53:11 (2019), 1545–1549 |
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| 2. |
R. V. Levin, V. N. Nevedomskiy, N. L. Bazhenov, G. G. Zegrya, B. V. Pushnii, M. N. Mizerov, “On the possibility of manufacturing strained InAs/GaSb superlattices by the mocvd method”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 273–276 ; Semiconductors, 53:2 (2019), 260–263 |
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2016 |
| 3. |
V. G. Tikhomirov, V. E. Zemlyakov, V. V. Volkov, Ya. M. Parnes, V. N. V’yuginov, V. V. Lundin, A. V. Sakharov, E. E. Zavarin, A. F. Tsatsul'nikov, N. A. Cherkashin, M. N. Mizerov, V. M. Ustinov, “Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 245–249 ; Semiconductors, 50:2 (2016), 244–248 |
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| 4. |
R. V. Levin, V. N. Nevedomskiy, B. V. Pushnii, N. A. Bert, M. N. Mizerov, “InAs/GaSb superlattices fabricated by metalorganic chemical vapor deposition”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:2 (2016), 79–84 ; Tech. Phys. Lett., 42:1 (2016), 96–98 |
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2015 |
| 5. |
R. V. Levin, A. E. Marichev, M. Z. Shvarts, E. P. Marukhina, V. P. Khvostikov, B. V. Pushnii, M. N. Mizerov, V. M. Andreev, “Photovoltaic converters of concentrated sunlight, based on InGaAsP(1.0 eV)/InP heterostructures”, Fizika i Tekhnika Poluprovodnikov, 49:5 (2015), 715–718 ; Semiconductors, 49:5 (2015), 700–703 |
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| 6. |
V. V. Lundin, D. V. Davydov, E. E. Zavarin, M. G. Popov, A. V. Sakharov, E. V. Yakovlev, D. S. Bazarevskii, R. A. Talalaev, A. F. Tsatsul'nikov, M. N. Mizerov, V. M. Ustinov, “MOVPE of III–N LED structures with short technological process”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:5 (2015), 9–17 ; Tech. Phys. Lett., 41:3 (2015), 213–216 |
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2013 |
| 7. |
V. S. Kalinovskii, R. V. Levin, B. V. Pushnii, M. N. Mizerov, V. D. Rumancev, V. M. Andreev, “Fabrication and study of $p$–$n$ structures with crystalline inclusions in the space-charge region”, Fizika i Tekhnika Poluprovodnikov, 47:12 (2013), 1677–1680 ; Semiconductors, 47:12 (2013), 1652–1655 |
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2012 |
| 8. |
A. F. Tsatsul'nikov, V. V. Lundin, E. E. Zavarin, A. V. Sakharov, Yu. G. Musikhin, S. O. Usov, M. N. Mizerov, N. A. Cherkashin, “InGaN/GaN heterostructures grown by submonolayer deposition”, Fizika i Tekhnika Poluprovodnikov, 46:10 (2012), 1357–1362 ; Semiconductors, 46:10 (2012), 1335–1340 |
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| 9. |
A. F. Tsatsul'nikov, V. V. Lundin, E. E. Zavarin, A. E. Nikolaev, A. V. Sakharov, M. M. Rozhavskaya, S. O. Usov, P. N. Brunkov, M. A. Sinicin, D. V. Davydov, M. N. Mizerov, N. A. Cherkashin, “Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region”, Fizika i Tekhnika Poluprovodnikov, 46:10 (2012), 1304–1308 ; Semiconductors, 46:10 (2012), 1281–1285 |
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| 10. |
V. I. Vasil’ev, G. S. Gagis, R. V. Levin, B. V. Pushnii, A. G. Deryagin, V. I. Kuchinskii, M. N. Mizerov, “AlInAsSb and AlGaInAsSb solid solutions for barrier layers of 3–5 $\mu$m spectral range radiation sources obtained by the method of vapor-phase epitaxy from organometallic compounds”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:19 (2012), 66–74 ; Tech. Phys. Lett., 38:10 (2012), 900–903 |
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1984 |
| 11. |
B. V. Egorov, S. Yu. Karpov, M. N. Mizerov, E. L. Portnoĭ, V. B. Smirnitskiĭ, “CONCENTRATING HOLOGRAPHIC DIFFRACTION LATTICE .2. EXPERIMENTAL RESULTS”, Zhurnal Tekhnicheskoi Fiziki, 54:10 (1984), 1948–1955 |
| 12. |
S. Yu. Karpov, M. N. Mizerov, E. L. Portnoĭ, V. B. Smirnitskiĭ, “CONCENTRATING HOLOGRAPHIC DIFFRACTION LATTICE .1. THEORY”, Zhurnal Tekhnicheskoi Fiziki, 54:10 (1984), 1942–1947 |
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