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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
N. A. Sobolev, A. E. Kalyadin, O. V. Feklisova, E. B. Yakimov, “Effect of compressive and stretching strains on the dislocation luminescence spectrum in silicon”, Fizika i Tekhnika Poluprovodnikov, 55:7 (2021), 550–553   ; Semiconductors, 55:7 (2021), 633–636 |
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2019 |
| 2. |
S. M. Peshcherova, E. B. Yakimov, A. I. Nepomnyashchikh, V. I. Orlov, O. V. Feklisova, L. A. Pavlova, R. V. Presnyakov, “Dependence of the bulk electrical properties of multisilicon on the grain misorientation parameters”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 59–64 ; Semiconductors, 53:1 (2019), 55–59 |
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2018 |
| 3. |
S. M. Peshcherova, E. B. Yakimov, A. I. Nepomnyashchikh, L. A. Pavlova, O. V. Feklisova, R. V. Presnyakov, “Electrical activity of extended defects in multicrystalline silicon”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 266–271 ; Semiconductors, 52:2 (2018), 254–259 |
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2015 |
| 4. |
S. M. Peshcherova, E. B. Yakimov, A. I. Nepomnyashchikh, L. A. Pavlova, O. V. Feklisova, “Recombination activity of interfaces in multicrystalline silicon”, Fizika i Tekhnika Poluprovodnikov, 49:6 (2015), 741–745 ; Semiconductors, 49:6 (2015), 724–728 |
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| 5. |
V. I. Orlov, O. V. Feklisova, E. B. Yakimov, “EBIC and LBIC studies of the properties of extended defects in plastically deformed silicon”, Fizika i Tekhnika Poluprovodnikov, 49:6 (2015), 737–740 ; Semiconductors, 49:6 (2015), 720–723 |
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O. V. Feklisova, E. B. Yakimov, “Effect of copper on the recombination activity of extended defects in silicon”, Fizika i Tekhnika Poluprovodnikov, 49:6 (2015), 732–736 ; Semiconductors, 49:6 (2015), 716–719 |
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2013 |
| 7. |
O. V. Feklisova, X. Yu, D. Yang, E. B. Yakimov, “Influence of metal impurities on recombination activity of dislocations in multicrystalline silicon”, Fizika i Tekhnika Poluprovodnikov, 47:2 (2013), 195–198 ; Semiconductors, 47:2 (2013), 232–234 |
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| 8. |
O. V. Feklisova, N. A. Yarykin, J. Weber, “Annealing kinetics of boron-containing centers in electron-irradiated silicon”, Fizika i Tekhnika Poluprovodnikov, 47:2 (2013), 192–194 ; Semiconductors, 47:2 (2013), 228–231 |
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