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Publications in Math-Net.Ru |
Citations |
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2025 |
| 1. |
M. V. Maksimov, F. I. Zubov, A. A. Bekman, G. O. Kornyshov, N. Yu. Gordeev, A. A. Kharchenko, O. I. Simchuk, N. A. Kalyuzhnyy, Yu. M. Shernyakov, “Current- and light-controlled switching of lasing wavelengths in InAs/InGaAs/GaAs quantum dot lasers for application in neuromorphic photonics”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:21 (2025), 45–49 |
| 2. |
A. E. Zhukov, È. I. Moiseev, I. S. Makhov, I. S. Fedosov, F. I. Zubov, A. M. Mozharov, K. A. Ivanov, A. M. Nadtochiy, N. V. Kryzhanovskaya, “High-frequency modulation of a quantum dot microring laser at elevated temperature”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:20 (2025), 32–35 |
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2024 |
| 3. |
F. I. Zubov, Yu. M. Shernyakov, O. I. Simchuk, G. O. Kornyshov, M. V. Maksimov, “Spectral characteristics of an optically coupled pair of stripe lasers based on InAs/InGaAs/GaAs quantum dots”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:22 (2024), 57–60 |
| 4. |
F. I. Zubov, Yu. M. Shernyakov, A. A. Bekman, È. I. Moiseev, Yu. A. Salii (Guseva), M. M. Kulagina, N. A. Kalyuzhnyy, S. A. Mintairov, M. V. Maksimov, “Half-disk microlasers with half-ring contact based on InGaAs/GaAs quantum well-dots with high output power”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:6 (2024), 23–27 |
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2023 |
| 5. |
F. I. Zubov, Yu. M. Shernyakov, A. A. Bekman, È. I. Moiseev, J. A. Salii (Guseva), M. M. Kulagina, N. A. Kalyuzhnyy, S. A. Mintairov, A. V. Nikolaev, E. V. Sherstnev, M. V. Maksimov, “Determination of the temperature and thermal resistance of a half-disk laser diode by measuring pulsed current-voltage characteristics”, Fizika i Tekhnika Poluprovodnikov, 57:9 (2023), 767–772 |
| 6. |
A. E. Zhukov, N. V. Kryzhanovskaya, I. S. Makhov, È. I. Moiseev, A. M. Nadtochiy, N. A. Fominykh, S. A. Mintairov, N. A. Kalyuzhnyy, F. I. Zubov, M. V. Maksimov, “Model for speed performance of quantum-dot waveguide photodiode”, Fizika i Tekhnika Poluprovodnikov, 57:3 (2023), 215–220 |
| 7. |
N. V. Kryzhanovskaya, S. A. Blokhin, I. S. Makhov, È. I. Moiseev, A. M. Nadtochiy, N. A. Fominykh, S. A. Mintairov, N. A. Kalyuzhnyy, J. A. Guseva, M. M. Kulagina, F. I. Zubov, E. S. Kolodeznyi, M. V. Maksimov, A. E. Zhukov, “Investigation of a $p$–$i$–$n$ photodetector with an absorbing medium based on InGaAs/GaAs quantum well-dots”, Fizika i Tekhnika Poluprovodnikov, 57:3 (2023), 202–206 |
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2022 |
| 8. |
M. E. Muretova, F. I. Zubov, L. V. Asryan, Yu. M. Shernyakov, M. V. Maksimov, A. E. Zhukov, “Design of blocking layers for suppression of parasitic recombination in high-power laser diodes with GaAs waveguide”, Fizika i Tekhnika Poluprovodnikov, 56:3 (2022), 363–369 |
| 9. |
N. Yu. Gordeev, È. I. Moiseev, N. A. Fominykh, N. V. Kryzhanovskaya, A. A. Bekman, G. O. Kornyshov, F. I. Zubov, Yu. M. Shernyakov, A. E. Zhukov, M. V. Maksimov, “Temperature-dependent characteristics of 1.3 $\mu$m InAs/InGaAs/GaAs quantum dot ring lasers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:18 (2022), 36–40 |
| 10. |
F. I. Zubov, Yu. M. Shernyakov, N. Yu. Gordeev, S. A. Mintairov, N. A. Kalyuzhnyy, M. V. Maksimov, N. V. Kryzhanovskaya, È. I. Moiseev, A. M. Nadtochiy, A. E. Zhukov, “Ultrahigh modal gain in stripe injection lasers and microlasers based on InGaAs/GaAs quantum dots”, Kvantovaya Elektronika, 52:7 (2022), 593–596 [Bull. Lebedev Physics Institute, 52:suppl. 1 (2025), S1–S6] |
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2021 |
| 11. |
A. E. Zhukov, N. V. Kryzhanovskaya, È. I. Moiseev, A. M. Nadtochiy, F. I. Zubov, M. V. Fetisova, M. V. Maksimov, N. Yu. Gordeev, “Saturation power of a semiconductor optical amplifier based on self-organized quantum dots”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 820–825 ; Semiconductors, 55 (2021), s67–s71 |
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| 12. |
F. I. Zubov, M. V. Maksimov, N. V. Kryzhanovskaya, È. I. Moiseev, A. M. Nadtochiy, A. S. Dragunova, S. A. Blokhin, A. A. Vorob'ev, A. M. Mozharov, S. A. Mintairov, N. A. Kalyuzhnyy, A. E. Zhukov, “Increasing the optical power of InGaAs/GaAs microdisk lasers transferred to a silicon substrate by thermal compression”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:20 (2021), 3–6 |
| 13. |
A. E. Zhukov, È. I. Moiseev, A. M. Nadtochiy, A. S. Dragunova, N. V. Kryzhanovskaya, M. M. Kulagina, S. A. Mintairov, N. A. Kalyuzhnyy, F. I. Zubov, M. V. Maksimov, “Energy consumption at high-frequency modulation of an uncooled InGaAs/GaAs/AlGaAs microdisk laser”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:13 (2021), 28–31 ; Tech. Phys. Lett., 47:9 (2021), 685–688 |
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2020 |
| 14. |
F. I. Zubov, M. E. Muretova, A. S. Payusov, M. V. Maksimov, A. E. Zhukov, L. V. Asryan, “Parasitic recombination in a laser with asymmetric barrier layers”, Fizika i Tekhnika Poluprovodnikov, 54:3 (2020), 296–303 ; Semiconductors, 54:3 (2020), 366–373 |
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| 15. |
A. E. Zhukov, È. I. Moiseev, A. M. Nadtochiy, A. S. Dragunova, N. V. Kryzhanovskaya, M. M. Kulagina, A. M. Mozharov, S. A. Kadinskaya, O. I. Simchuk, F. I. Zubov, M. V. Maksimov, “Lasing of injection microdisks with InAs/InGaAs/GaAs quantum dots transferred to silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:16 (2020), 3–6 ; Tech. Phys. Lett., 46:8 (2020), 783–786 |
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| 16. |
A. E. Zhukov, È. I. Moiseev, A. M. Nadtochiy, N. V. Kryzhanovskaya, M. M. Kulagina, S. A. Mintairov, N. A. Kalyuzhnyy, F. I. Zubov, M. V. Maksimov, “The effect of self-heating on the modulation characteristics of a microdisk laser”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020), 3–7 ; Tech. Phys. Lett., 46:6 (2020), 515–519 |
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2019 |
| 17. |
A. E. Zhukov, È. I. Moiseev, N. V. Kryzhanovskaya, S. A. Blokhin, M. M. Kulagina, Yu. A. Guseva, S. A. Mintairov, N. A. Kalyuzhnyy, A. M. Mozharov, F. I. Zubov, M. V. Maksimov, “Evaluation of the impact of surface recombination in microdisk lasers by means of high-frequency modulation”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1122–1127 ; Semiconductors, 53:8 (2019), 1099–1103 |
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| 18. |
F. I. Zubov, È. I. Moiseev, G. O. Kornyshov, N. V. Kryzhanovskaya, Yu. M. Shernyakov, A. S. Payusov, M. M. Kulagina, N. A. Kalyuzhnyy, S. A. Mintairov, M. V. Maksimov, A. E. Zhukov, “Specific features of the current–voltage characteristic of microdisk lasers based on InGaAs/GaAs quantum well-dots”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:19 (2019), 37–39 ; Tech. Phys. Lett., 45:10 (2019), 994–996 |
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| 19. |
A. E. Zhukov, È. I. Moiseev, N. V. Kryzhanovskaya, F. I. Zubov, A. M. Mozharov, N. A. Kalyuzhnyy, S. A. Mintairov, M. M. Kulagina, S. A. Blokhin, M. V. Maksimov, “Energy consumption for high-frequency switching of a quantum-dot microdisk laser”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:16 (2019), 49–51 ; Tech. Phys. Lett., 45:8 (2019), 847–849 |
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| 20. |
M. V. Maksimov, Yu. M. Shernyakov, F. I. Zubov, I. I. Novikov, A. G. Gladyshev, L. Ya. Karachinsky, D. V. Denisov, S. S. Rochas, E. S. Kolodeznyi, A. Yu. Egorov, A. E. Zhukov, “Temperature dependence of characteristics of diode lasers with narrow quantum wells of the 1.55 $\mu$m spectral range based on phosphorous-free heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019), 20–23 ; Tech. Phys. Lett., 45:6 (2019), 549–552 |
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2018 |
| 21. |
L. V. Asryan, F. I. Zubov, Yu. S. Balezina (Polubavkina), È. I. Moiseev, M. E. Muretova, N. V. Kryzhanovskaya, M. V. Maksimov, A. E. Zhukov, “Violation of local electroneutrality in the quantum well of a semiconductor laser with asymmetric barrier layers”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1518–1526 ; Semiconductors, 52:12 (2018), 1621–1629 |
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| 22. |
F. I. Zubov, M. V. Maksimov, N. Yu. Gordeev, Yu. S. Polubavkina, A. E. Zhukov, “Suppression of recombination in the waveguide of a laser heterostructure by means of double asymmetric barriers”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 260–265 ; Semiconductors, 52:2 (2018), 248–253 |
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2017 |
| 23. |
F. I. Zubov, E. S. Semenova, I. V. Kul'kova, K. Yvind, N. V. Kryzhanovskaya, M. V. Maksimov, A. E. Zhukov, “On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of $\sim$1.5 $\mu$m on an InP substrate”, Fizika i Tekhnika Poluprovodnikov, 51:10 (2017), 1382–1386 ; Semiconductors, 51:10 (2017), 1332–1336 |
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| 24. |
R. A. Khabibullin, N. V. Shchavruk, A. N. Klochkov, I. A. Glinskiy, N. V. Zenchenko, D. S. Ponomarev, P. P. Maltsev, A. A. Zaitsev, F. I. Zubov, A. E. Zhukov, G. E. Cirlin, Zh. I. Alferov, “Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 540–546 ; Semiconductors, 51:4 (2017), 514–519 |
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| 25. |
Yu. S. Polubavkina, F. I. Zubov, È. I. Moiseev, N. V. Kryzhanovskaya, M. V. Maksimov, E. S. Semenova, K. Yvind, L. V. Asryan, A. E. Zhukov, “Specific features of waveguide recombination in laser structures with asymmetric barrier layers”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 263–268 ; Semiconductors, 51:2 (2017), 254–259 |
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| 26. |
A. V. Ikonnikov, K. V. Marem'yanin, S. V. Morozov, V. I. Gavrilenko, A. Yu. Pavlov, N. V. Shchavruk, R. A. Khabibullin, R. R. Reznik, G. E. Cirlin, F. I. Zubov, A. E. Zhukov, Zh. I. Alferov, “Terahertz radiation generation in multilayer quantum-cascade heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:7 (2017), 86–94 ; Tech. Phys. Lett., 43:4 (2017), 362–365 |
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2016 |
| 27. |
F. I. Zubov, N. V. Kryzhanovskaya, È. I. Moiseev, Yu. S. Polubavkina, O. I. Simchuk, M. M. Kulagina, Yu. M. Zadiranov, S. I. Troshkov, A. A. Lipovskii, M. V. Maksimov, A. E. Zhukov, “Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1425–1428 ; Semiconductors, 50:10 (2016), 1408–1411 |
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| 28. |
R. A. Khabibullin, N. V. Shchavruk, A. Yu. Pavlov, D. S. Ponomarev, K. N. Tomosh, R. R. Galiev, P. P. Maltsev, A. E. Zhukov, G. E. Cirlin, F. I. Zubov, Zh. I. Alferov, “Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1395–1400 ; Semiconductors, 50:10 (2016), 1377–1382 |
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| 29. |
L. V. Asryan, F. I. Zubov, N. V. Kryzhanovskaya, M. V. Maksimov, A. E. Zhukov, “Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1380–1386 ; Semiconductors, 50:10 (2016), 1362–1368 |
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2015 |
| 30. |
A. E. Zhukov, L. V. Asryan, E. S. Semenova, F. I. Zubov, N. V. Kryzhanovskaya, M. V. Maksimov, “On the optimization of asymmetric barrier layers in InAlGaAs/AlGaAs laser heterostructures on GaAs substrates”, Fizika i Tekhnika Poluprovodnikov, 49:7 (2015), 956–960 ; Semiconductors, 49:7 (2015), 935–938 |
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| 31. |
F. I. Zubov, A. E. Zhukov, Yu. M. Shernyakov, M. V. Maksimov, N. V. Kryzhanovskaya, K. Yvind, E. S. Semenova, L. V. Asryan, “The effect of asymmetric barrier layers in the waveguide region on power characteristics of QW lasers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:9 (2015), 61–70 ; Tech. Phys. Lett., 41:5 (2015), 439–442 |
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2013 |
| 32. |
F. I. Zubov, Yu. M. Shernyakov, M. V. Maksimov, A. E. Zhukov, D. A. Livshits, A. S. Payusov, A. M. Nadtochiy, A. V. Savel'ev, N. V. Kryzhanovskaya, N. Yu. Gordeev, “Spectral dependence of the linewidth enhancement factor in quantum dot lasers”, Fizika i Tekhnika Poluprovodnikov, 47:12 (2013), 1681–1686 ; Semiconductors, 47:12 (2013), 1656–1660 |
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| 33. |
N. V. Kryzhanovskaya, A. E. Zhukov, A. M. Nadtochiy, M. V. Maksimov, È. I. Moiseev, M. M. Kulagina, A. V. Savel'ev, E. M. Arakcheeva, A. A. Lipovskii, F. I. Zubov, A. Kapsalis, C. Mesaritakis, D. Syvridis, A. Mintairov, D. Livshits, “Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region”, Fizika i Tekhnika Poluprovodnikov, 47:10 (2013), 1396–1399 ; Semiconductors, 47:10 (2013), 1387–1390 |
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| 34. |
A. E. Zhukov, A. V. Savel'ev, M. V. Maksimov, N. V. Kryzhanovskaya, N. Yu. Gordeev, Yu. M. Shernyakov, A. S. Payusov, A. M. Nadtochiy, F. I. Zubov, V. V. Korenev, “Optimization of the design and mode of operation of a QD laser for reducing the heat-to-bitrate ratio”, Fizika i Tekhnika Poluprovodnikov, 47:8 (2013), 1102–1108 ; Semiconductors, 47:8 (2013), 1097–1102 |
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2012 |
| 35. |
Yu. M. Shernyakov, M. V. Maksimov, A. E. Zhukov, A. V. Savel'ev, V. V. Korenev, F. I. Zubov, N. Yu. Gordeev, D. A. Livshits, “Effect of active-region modulation doping on simultaneous ground-state and excited-state lasing in quantum-dot lasers”, Fizika i Tekhnika Poluprovodnikov, 46:10 (2012), 1353–1356 ; Semiconductors, 46:10 (2012), 1331–1334 |
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| 36. |
A. E. Zhukov, L. V. Asryan, Yu. M. Shernyakov, M. V. Maksimov, F. I. Zubov, N. V. Kryzhanovskaya, K. Yvind, E. S. Semenova, “Effect of asymmetric barrier layers in the waveguide region on the temperature characteristics of quantum-well lasers”, Fizika i Tekhnika Poluprovodnikov, 46:8 (2012), 1049–1053 ; Semiconductors, 46:8 (2012), 2017–1031 |
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| 37. |
A. E. Zhukov, M. V. Maksimov, Yu. M. Shernyakov, D. A. Livshits, A. V. Savel'ev, F. I. Zubov, V. V. Klimenko, “Features of simultaneous ground- and excited-state lasing in quantum dot lasers”, Fizika i Tekhnika Poluprovodnikov, 46:2 (2012), 241–246 ; Semiconductors, 46:2 (2012), 231–235 |
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| 38. |
A. E. Zhukov, A. V. Savel'ev, M. V. Maksimov, Yu. M. Shernyakov, E. M. Arakcheeva, F. I. Zubov, A. A. Krasivichev, N. V. Kryzhanovskaya, “Effect of an excited-state optical transition on the linewidth enhancement factor of quantum dot lasers”, Fizika i Tekhnika Poluprovodnikov, 46:2 (2012), 235–240 ; Semiconductors, 46:2 (2012), 225–230 |
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