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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
B. E. Umirzakov, S. B. Donaev, R. M. Yorkulov, R. Kh. Ashurov, V. M. Rotstein, “Composition and morphology of Si(111) surface with SiO$_{2}$ film of different thickness”, Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 1045–1048   |
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2020 |
| 2. |
S. B. Donaev, B. E. Umirzakov, “Effect of the implantation of Al$^+$ ions on the composition, electronic and crystalline structure of the GaP(111) surface”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 716–719 ; Semiconductors, 54:8 (2020), 860–862 |
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| 3. |
S. B. Donaev, “Nanodimensional CoSiO films obtained by ion implantation on a ŅoSi$_{2}$ surface”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:16 (2020), 16–18 ; Tech. Phys. Lett., 46:8 (2020), 796–798 |
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2019 |
| 4. |
S. B. Donaev, B. E. Umirzakov, N. M. Mustafaeva, “Emissivity of laser-activated Pd–Ba alloy”, Zhurnal Tekhnicheskoi Fiziki, 89:10 (2019), 1626–1629 ; Tech. Phys., 64:10 (2019), 1541–1543 |
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| 5. |
B. E. Umirzakov, S. B. Donaev, N. M. Mustafaeva, “Electronic and optical properties of GaAlAs/GaAs thin films”, Zhurnal Tekhnicheskoi Fiziki, 89:10 (2019), 1589–1591 ; Tech. Phys., 64:10 (2019), 1506–1508 |
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| 6. |
B. E. Umirzakov, R. Kh. Ashurov, S. B. Donaev, “The morphology and electronic properties of si nanoscale structures on a CaF$_{2}$ surface”, Zhurnal Tekhnicheskoi Fiziki, 89:2 (2019), 264–267 ; Tech. Phys., 64:2 (2019), 232–235 |
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2015 |
| 7. |
S. B. Donaev, B. E. Umirzakov, D. A. Tashmukhamedova, “Electronic structure of Ga$_{1-x}$Al$_x$As nanostructures grown on the GaAs surface by ion implantation”, Zhurnal Tekhnicheskoi Fiziki, 85:10 (2015), 148–151 ; Tech. Phys., 60:10 (2015), 1563–1566 |
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| 8. |
Z. A. Isakhanov, Yu. E. Umirzakov, M. K. Ruzibaeva, S. B. Donaev, “Effect of the O$_2^+$-ion bombardment on the TiN composition and structure”, Zhurnal Tekhnicheskoi Fiziki, 85:2 (2015), 156–158 ; Tech. Phys., 60:2 (2015), 313–315 |
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2013 |
| 9. |
B. E. Umirzakov, D. A. Tashmukhamedova, M. K. Ruzibaeva, A. K. Tashatov, S. B. Donaev, B. B. Mavlyanov, “Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods”, Zhurnal Tekhnicheskoi Fiziki, 83:9 (2013), 146–149 ; Tech. Phys., 58:9 (2013), 1383–1386 |
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