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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
S. M. Peshcherova, E. B. Yakimov, A. I. Nepomnyashchikh, V. I. Orlov, O. V. Feklisova, L. A. Pavlova, R. V. Presnyakov, “Dependence of the bulk electrical properties of multisilicon on the grain misorientation parameters”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 59–64   ; Semiconductors, 53:1 (2019), 55–59 |
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2018 |
| 2. |
S. M. Peshcherova, E. B. Yakimov, A. I. Nepomnyashchikh, L. A. Pavlova, O. V. Feklisova, R. V. Presnyakov, “Electrical activity of extended defects in multicrystalline silicon”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 266–271 ; Semiconductors, 52:2 (2018), 254–259 |
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2015 |
| 3. |
S. M. Peshcherova, E. B. Yakimov, A. I. Nepomnyashchikh, L. A. Pavlova, O. V. Feklisova, “Recombination activity of interfaces in multicrystalline silicon”, Fizika i Tekhnika Poluprovodnikov, 49:6 (2015), 741–745 ; Semiconductors, 49:6 (2015), 724–728 |
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2014 |
| 4. |
S. M. Peshcherova, A. I. Nepomnyashchikh, L. A. Pavlova, I. A. Eliseev, R. V. Presnyakov, “Morphological characteristics of grain boundaries in multicrystalline silicon”, Fizika i Tekhnika Poluprovodnikov, 48:4 (2014), 492–497 ; Semiconductors, 48:4 (2014), 476–480 |
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S. M. Peshcherova, A. I. Nepomnyashchikh, L. A. Pavlova, “The electric activity of special grain boundaries in multicrystalline silicon grown from metallurgical refined silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:22 (2014), 30–36 ; Tech. Phys. Lett., 40:11 (2014), 1000–1002 |
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