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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
V. M. Kalygina, T. Z. Lygdenova, V. À. Novikov, Yu. S. Petrova, A. V. Tsymbalov, T. M. Yaskevich, “Structure and properties of gallium-oxide films produced by high-frequency magnetron-assisted deposition”, Fizika i Tekhnika Poluprovodnikov, 53:3 (2019), 411–417   ; Semiconductors, 53:3 (2019), 388–394 |
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2015 |
| 2. |
V. M. Kalygina, V. V. Vishnikina, Yu. S. Petrova, I. A. Prudaev, T. M. Yaskevich, “Photoelectric characteristics of metal – Ga$_2$O$_3$–GaAs structures”, Fizika i Tekhnika Poluprovodnikov, 49:3 (2015), 357–363 ; Semiconductors, 49:3 (2015), 345–351 |
4
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2014 |
| 3. |
V. M. Kalygina, V. A. Novikov, Yu. S. Petrova, O. P. Tolbanov, E. V. Chernikov, S. Yu. Tsupiy, T. M. Yaskevich, “Effect of thermal annealing and exposure to oxygen plasma on the properties of TiO$_2$–Si structures”, Fizika i Tekhnika Poluprovodnikov, 48:7 (2014), 989–994 ; Semiconductors, 48:7 (2014), 961–966 |
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| 4. |
V. M. Kalygina, V. A. Novikov, Yu. S. Petrova, O. P. Tolbanov, E. V. Chernikov, S. Yu. Tsupiy, T. M. Yaskevich, “Properties of TiO$_2$ films on silicon substrate”, Fizika i Tekhnika Poluprovodnikov, 48:6 (2014), 759–762 ; Semiconductors, 48:6 (2014), 739–742 |
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2013 |
| 5. |
V. M. Kalygina, V. V. Vishnikina, A. N. Zarubin, V. A. Novikov, Yu. S. Petrova, O. P. Tolbanov, A. V. Tyazhev, S. Yu. Tsupiy, T. M. Yaskevich, “Effect of annealing in argon on the properties of thermally deposited gallium-oxide films”, Fizika i Tekhnika Poluprovodnikov, 47:8 (2013), 1137–1143 ; Semiconductors, 47:8 (2013), 1130–1136 |
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| 6. |
V. M. Kalygina, A. N. Zarubin, V. A. Novikov, Yu. S. Petrova, O. P. Tolbanov, A. V. Tyazhev, S. Yu. Tsupiy, T. M. Yaskevich, “Gallium-oxide films obtained by thermal evaporation”, Fizika i Tekhnika Poluprovodnikov, 47:5 (2013), 598–603 ; Semiconductors, 47:5 (2013), 612–618 |
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2012 |
| 7. |
V. M. Kalygina, K. I. Valiev, A. N. Zarubin, Yu. S. Petrova, O. P. Tolbanov, A. V. Tyazhev, T. M. Yaskevich, “Electrical characteristics of $n$-GaAs-anode film-Ga$_2$O$_3$-metal structures”, Fizika i Tekhnika Poluprovodnikov, 46:8 (2012), 1027–1031 ; Semiconductors, 46:8 (2012), 1003–1007 |
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| 8. |
V. M. Kalygina, A. N. Zarubin, E. P. Naiden, V. A. Novikov, Yu. S. Petrova, O. P. Tolbanov, A. V. Tyazhev, T. M. Yaskevich, “The effect of annealing on the properties of Ga$_2$O$_3$ anodic films”, Fizika i Tekhnika Poluprovodnikov, 46:2 (2012), 278–284 ; Semiconductors, 46:2 (2012), 267–273 |
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