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Publications in Math-Net.Ru |
Citations |
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2025 |
| 1. |
M. Tursunov, A. Dekhkonov, G. Abdurakhmanov, V. K. Ksenevich, D. Tashmukhamedova, G. Vohidova, Dibya Prakash Rai, “Effect of strain on thermoEMF in the silicate glass doped with ruthenium dioxide”, Zhurnal Tekhnicheskoi Fiziki, 95:7 (2025), 1375–1384   |
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2023 |
| 2. |
S. T. Abraeva, D. A. Tashmukhamedova, M. B. Yusupjanova, B. E. Umirzakov, “Peculiarities of photoelectron spectra of Ge implanted with Na$^+$ ions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:1 (2023), 27–30 |
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2021 |
| 3. |
B. E. Umirzakov, J. Sh. Sodikjanov, D. A. Tashmukhamedova, A. A. Abduvaitov, E. M. Rabbimov, “Adsorption of Ba atoms influences the composition, emission, and optical properties of CdS single crystals”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:12 (2021), 3–5 ; Tech. Phys. Lett., 47:8 (2021), 620–623 |
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2020 |
| 4. |
B. E. Umirzakov, D. A. Tashmukhamedova, S. T. Gulyamova, G. Kh. Allayarova, “Effect of the Ba$^+$ ion implantation on the composition and electronic properties of MoO$_{3}$/Mo (111) films”, Zhurnal Tekhnicheskoi Fiziki, 90:5 (2020), 831–834 ; Tech. Phys., 65:5 (2020), 795–798 |
6
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| 5. |
B. E. Umirzakov, D. A. Tashmukhamedova, A. K. Tashatov, N. M. Mustafoeva, D. M. Muradkabilov, “Effect of the disordering of thin surface layers on the electronic and optical properties of Si(111)”, Fizika i Tekhnika Poluprovodnikov, 54:11 (2020), 1211–1216 ; Semiconductors, 54:11 (2020), 1424–1429 |
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| 6. |
D. A. Tashmukhamedova, M. B. Yusupjanova, G. Kh. Allayarova, B. E. Umirzakov, “Crystal structure and band gap of nanoscale phases of Si formed at various depths of the near-surface region of SiO$_{2}$”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020), 32–34 ; Tech. Phys. Lett., 46:10 (2020), 972–975 |
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2019 |
| 7. |
B. E. Umirzakov, D. A. Tashmukhamedova, M. A. Tursunov, Y. S. Ergashov, G. Kh. Allayarova, “Escape depth of secondary and photoelectrons from CdTe films with a Ba film”, Zhurnal Tekhnicheskoi Fiziki, 89:7 (2019), 1115–1117 ; Tech. Phys., 64:7 (2019), 1051–1054 |
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| 8. |
B. E. Umirzakov, D. A. Tashmukhamedova, A. K. Tashatov, N. M. Mustafoeva, “Electronic and optical properties of NiSi$_{2}$/Si nanofilms”, Zhurnal Tekhnicheskoi Fiziki, 89:5 (2019), 759–761 ; Tech. Phys., 64:5 (2019), 708–710 |
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| 9. |
B. E. Umirzakov, D. A. Tashmukhamedova, G. Kh. Allayarova, J. Sh. Sodikjanov, “The effect of the formation of silicides on the resistivity of silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:7 (2019), 49–51 ; Tech. Phys. Lett., 45:4 (2019), 356–358 |
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2017 |
| 10. |
Kh. Kh. Boltaev, J. Sh. Sodikjanov, D. A. Tashmukhamedova, B. E. Umirzakov, “Composition and structure of Ga$_{1-x}$Na$_{x}$As nanolayers produced near the GaAs surface by Na$^+$ implantation”, Zhurnal Tekhnicheskoi Fiziki, 87:12 (2017), 1884–1886 ; Tech. Phys., 62:12 (2017), 1882–1884 |
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2016 |
| 11. |
M. B. Yusupjanova, D. A. Tashmukhamedova, B. E. Umirzakov, “Composition, morphology, and electronic structure of the nanophases created on the SiO$_{2}$ Surface by Ar$^{+}$ ion bombardment”, Zhurnal Tekhnicheskoi Fiziki, 86:4 (2016), 148–150 ; Tech. Phys., 61:4 (2016), 628–630 |
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2015 |
| 12. |
S. B. Donaev, B. E. Umirzakov, D. A. Tashmukhamedova, “Electronic structure of Ga$_{1-x}$Al$_x$As nanostructures grown on the GaAs surface by ion implantation”, Zhurnal Tekhnicheskoi Fiziki, 85:10 (2015), 148–151 ; Tech. Phys., 60:10 (2015), 1563–1566 |
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2013 |
| 13. |
B. E. Umirzakov, D. A. Tashmukhamedova, M. K. Ruzibaeva, A. K. Tashatov, S. B. Donaev, B. B. Mavlyanov, “Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods”, Zhurnal Tekhnicheskoi Fiziki, 83:9 (2013), 146–149 ; Tech. Phys., 58:9 (2013), 1383–1386 |
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| 14. |
B. E. Umirzakov, D. A. Tashmukhamedova, D. M. Muradkabilov, Kh. Kh. Boltaev, “Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF$_2$ surface layers using low-energy ion implantation”, Zhurnal Tekhnicheskoi Fiziki, 83:6 (2013), 66–70 |
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