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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
A. V. Almaev, N. N. Yakovlev, E. V. Chernikov, O. P. Tolbanov, “Selective sensors of nitrogen dioxide based on thin tungsten oxide films under optical irradiation”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019), 7–10   ; Tech. Phys. Lett., 45:10 (2019), 1016–1019 |
8
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2018 |
| 2. |
V. M. Kalygina, I. L. Remizova, O. P. Tolbanov, “Conductivity of Ga$_{2}$O$_{3}$–GaAs heterojunctions”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 154–160 ; Semiconductors, 52:2 (2018), 143–149 |
2
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| 3. |
I. A. Prudaev, M. G. Verkholetov, A. D. Koroleva, O. P. Tolbanov, “Charge carrier transport and deep levels recharge in avalanche $S$-diodes based on GaAs”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:11 (2018), 21–29 ; Tech. Phys. Lett., 44:6 (2018), 465–468 |
12
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2016 |
| 4. |
V. M. Kalygina, I. M. Egorova, V. À. Novikov, I. A. Prudaev, O. P. Tolbanov, “Relation between the structural and phase transformations in titanium-oxide films and the electrical and photoelectric properties of TiO$_{2}$–Si structures”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1178–1184 ; Semiconductors, 50:9 (2016), 1156–1162 |
2
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| 5. |
V. M. Kalygina, I. M. Egorova, I. A. Prudaev, O. P. Tolbanov, “Conduction in titanium dioxide films and metal–TiO$_{2}$–Si structures”, Fizika i Tekhnika Poluprovodnikov, 50:8 (2016), 1036–1040 ; Semiconductors, 50:8 (2016), 1015–1019 |
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2015 |
| 6. |
V. M. Kalygina, Yu. S. Petrova, I. A. Prudaev, O. P. Tolbanov, S. Yu. Tsupiy, “Deep centers in TiO$_2$-Si structures”, Fizika i Tekhnika Poluprovodnikov, 49:8 (2015), 1036–1042 ; Semiconductors, 49:8 (2015), 1012–1018 |
1
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2014 |
| 7. |
V. M. Kalygina, V. A. Novikov, Yu. S. Petrova, O. P. Tolbanov, E. V. Chernikov, S. Yu. Tsupiy, T. M. Yaskevich, “Effect of thermal annealing and exposure to oxygen plasma on the properties of TiO$_2$–Si structures”, Fizika i Tekhnika Poluprovodnikov, 48:7 (2014), 989–994 ; Semiconductors, 48:7 (2014), 961–966 |
5
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| 8. |
V. M. Kalygina, V. A. Novikov, Yu. S. Petrova, O. P. Tolbanov, E. V. Chernikov, S. Yu. Tsupiy, T. M. Yaskevich, “Properties of TiO$_2$ films on silicon substrate”, Fizika i Tekhnika Poluprovodnikov, 48:6 (2014), 759–762 ; Semiconductors, 48:6 (2014), 739–742 |
2
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2013 |
| 9. |
I. A. Prudaev, I. Yu. Golygin, S. B. Shirapov, I. S. Romanov, S. S. Khludkov, O. P. Tolbanov, “Influence of temperature on the mechanism of carrier injection in light-emitting diodes based on InGaN/GaN multiple quantum wells”, Fizika i Tekhnika Poluprovodnikov, 47:10 (2013), 1391–1395 ; Semiconductors, 47:10 (2013), 1382–1386 |
13
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| 10. |
V. M. Kalygina, V. V. Vishnikina, A. N. Zarubin, V. A. Novikov, Yu. S. Petrova, O. P. Tolbanov, A. V. Tyazhev, S. Yu. Tsupiy, T. M. Yaskevich, “Effect of annealing in argon on the properties of thermally deposited gallium-oxide films”, Fizika i Tekhnika Poluprovodnikov, 47:8 (2013), 1137–1143 ; Semiconductors, 47:8 (2013), 1130–1136 |
2
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| 11. |
V. M. Kalygina, A. N. Zarubin, V. A. Novikov, Yu. S. Petrova, O. P. Tolbanov, A. V. Tyazhev, S. Yu. Tsupiy, T. M. Yaskevich, “Gallium-oxide films obtained by thermal evaporation”, Fizika i Tekhnika Poluprovodnikov, 47:5 (2013), 598–603 ; Semiconductors, 47:5 (2013), 612–618 |
7
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2012 |
| 12. |
V. M. Kalygina, K. I. Valiev, A. N. Zarubin, Yu. S. Petrova, O. P. Tolbanov, A. V. Tyazhev, T. M. Yaskevich, “Electrical characteristics of $n$-GaAs-anode film-Ga$_2$O$_3$-metal structures”, Fizika i Tekhnika Poluprovodnikov, 46:8 (2012), 1027–1031 ; Semiconductors, 46:8 (2012), 1003–1007 |
4
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| 13. |
V. M. Kalygina, A. N. Zarubin, E. P. Naiden, V. A. Novikov, Yu. S. Petrova, O. P. Tolbanov, A. V. Tyazhev, T. M. Yaskevich, “The effect of annealing on the properties of Ga$_2$O$_3$ anodic films”, Fizika i Tekhnika Poluprovodnikov, 46:2 (2012), 278–284 ; Semiconductors, 46:2 (2012), 267–273 |
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1992 |
| 14. |
S. S. Khludkov, O. P. Tolbanov, “Mechanism of high-speed switching in gallium-arsenide structures with deep centers”, Fizika i Tekhnika Poluprovodnikov, 26:2 (1992), 386–390 |
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