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Publications in Math-Net.Ru |
Citations |
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2026 |
| 1. |
R. A. Irgashev, A. S. Steparuk, V. V. Emets, E. V. Tekshina, N. M. Tolkach, P. I. Lazarenko, G. L. Rusinov, S. A. Kozyukhin, “New metal-free dye with an acceptor-anchor group of thieno[3,2-<em>b</em>]thiophene family for dye-sensitized solar cells”, Mendeleev Commun., 36:1 (2026), 72–75  |
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2025 |
| 2. |
A. G. Son, V. A. Gushchina, A. A. Egorova, A. A. Sadovnikov, N. A. Bert, A. R. Tameev, S. A. Kozyukhin, “CsPbBr<sub>3</sub> and Cs<sub>4</sub>PbBr<sub>6</sub> perovskite nanoparticles: hidden potential of Cs<sub>4</sub>PbBr<sub>6</sub> or ineffective fluorescence?”, Mendeleev Commun., 35:2 (2025), 193–195   |
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2023 |
| 3. |
V. A. Baitova, M. A. Knyazeva, I. A. Mukanov, A. O. Tarasevich, A. V. Naumov, A. G. Son, S. A. Kozyukhin, I. Yu. Eremchev, “Evolution of the luminescence properties of single CsPbBr$_3$ perovskite nanocrystals during photodegradation”, Pis'ma v Zh. Èksper. Teoret. Fiz., 118:8 (2023), 570–577 ; JETP Letters, 118:8 (2023), 560–567 |
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| 4. |
M. P. Smaev, P. I. Lazarenko, M. E. Fedyanina, I. A. Budagovsky, A. Raab, I. V. Sagunova, S. A. Kozyukhin, “Formation of periodic two-phase structures on the surface of amorphous Ge$_2$Sb$_2$Te$_5$ films under the action of ultrashort laser pulses of different durations and repetition rates”, Optics and Spectroscopy, 131:2 (2023), 196–201  |
| 5. |
A. V. Kolchin, S. V. Zabotnov, D. V. Shuleiko, P. I. Lazarenko, V. B. Glukhenkaya, S. A. Kozyukhin, P. K. Kashkarov, “Kinetics of reversible phase transitions in Ge$_2$Sb$_2$Te$_5$ thin films at femtosecond laser irradiation”, Optics and Spectroscopy, 131:2 (2023), 145–153 |
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2022 |
| 6. |
A. S. Steparuk, R. A. Irgashev, E. F. Zhilina, V. V. Emets, V. A. Grinberg, E. V. Tekshina, E. V. Belova, P. I. Lazarenko, N. M. Tolkach, G. L. Rusinov, S. A. Kozyukhin, “New thieno[3,2-<i>b</i>]indole conjugates with 5-(methylene)rhodanine-3-acetic acid in dye-sensitized solar cells”, Mendeleev Commun., 32:4 (2022), 523–526 |
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| 7. |
S. A. Kozyukhin, P. I. Lazarenko, A. I. Popov, I. L. Eremenko, “Phase change memory materials and their applications”, Usp. Khim., 91:9 (2022), 1–39 ; Russian Chem. Reviews, 91:9 (2022), 1–38 |
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2018 |
| 8. |
K. V. Ivanov, A. V. Agafonov, A. Y. Baranchikov, V. K. Ivanov, S. A. Kozyukhin, E. V. Fatyushina, V. V. Kozik, “Influence of thermal treatment of nanometer-sized titanate and barium orthotitanate precursors on the electrorheological effect”, Nanosystems: Physics, Chemistry, Mathematics, 9:6 (2018), 746–753 |
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| 9. |
S. A. Kozyukhin, S. A. Bedin, P. G. Rudakovskaya, O. S. Ivanova, V. K. Ivanov, “Dielectric properties of nanocrystalline tungsten oxide in the temperature range of 223–293 K”, Fizika i Tekhnika Poluprovodnikov, 52:7 (2018), 745–750 ; Semiconductors, 52:7 (2018), 885–890 |
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| 10. |
S. A. Yakovlev, A. V. Ankudinov, Yu. V. Vorobyov, M. M. Voronov, S. A. Kozyukhin, B. T. Melekh, A. B. Pevtsov, “Laser-induced modification of the surface of Ge$_{2}$Sb$_{2}$Te$_{5}$ thin films: phase changes and periodic-structure formation”, Fizika i Tekhnika Poluprovodnikov, 52:6 (2018), 664–670 ; Semiconductors, 52:6 (2018), 809–815 |
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2017 |
| 11. |
V. Yu. Kotov, A. B. Ilyukhin, A. A. Sadovnikov, K. P. Birin, N. P. Simonenko, H. T. Nguyen, A. Y. Baranchikov, S. A. Kozyukhin, “Bis(4-cyano-1-pyridino)pentane halobismuthates. Light-harvesting material with an optical band gap of 1.59 eV”, Mendeleev Commun., 27:3 (2017), 271–273 |
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| 12. |
A. A. Sherchenkov, S. A. Kozyukhin, P. I. Lazarenko, A. V. Babich, N. A. Bogoslovskii, I. V. Sagunova, E. N. Redichev, “Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb$_{2}$Te$_{3}$ chalcogenide semiconductors”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 154–160 ; Semiconductors, 51:2 (2017), 146–152 |
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2016 |
| 13. |
S. A. Fefelov, L. P. Kazakova, D. Arsova, S. A. Kozyukhin, K. D. Tsendin, O. Yu. Prikhodko, “Voltage oscillations in the case of the switching effect in thin layers of Ge–Sb–Te chalcogenides in the current mode”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 958–962 ; Semiconductors, 50:7 (2016), 941–946 |
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2015 |
| 14. |
O. Shpotyuk, S. A. Kozyukhin, M. Shpotyuk, A. Ingram, R. Szatanik, “Positronics of radiation-induced effects in chalcogenide glassy semiconductors”, Fizika i Tekhnika Poluprovodnikov, 49:3 (2015), 307–313 ; Semiconductors, 49:3 (2015), 298–304 |
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2014 |
| 15. |
S. A. Fefelov, L. P. Kazakova, S. A. Kozyukhin, K. D. Tsendin, D. Arsova, V. Pamukchieva, “Current-voltage characteristics of thin Ge$_2$Sb$_2$Te$_5$ films taken using a measuring circuit with a current source”, Zhurnal Tekhnicheskoi Fiziki, 84:4 (2014), 80–84 ; Tech. Phys., 59:4 (2014), 546–550 |
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| 16. |
H. Ph. Nguyen, S. A. Kozyukhin, A. B. Pevtsov, “Influence of bismuth on the optical properties of Ge$_2$Sb$_2$Te$_5$ thin films”, Fizika i Tekhnika Poluprovodnikov, 48:5 (2014), 597–603 ; Semiconductors, 48:5 (2014), 577–583 |
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2012 |
| 17. |
A. P. Avachev, S. P. Vikhrov, N. V. Vishnyakov, S. A. Kozyukhin, K. V. Mitrofanov, E. I. Terukov, “Phase transitions in thin Ge$_2$Sb$_2$Te$_5$ chalcogenide films according to Raman spectroscopy data”, Fizika i Tekhnika Poluprovodnikov, 46:5 (2012), 609–612 ; Semiconductors, 46:5 (2012), 591–594 |
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