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Publications in Math-Net.Ru |
Citations |
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2023 |
| 1. |
B. A. Matveev, V. I. Ratushnyi, A. Yu. Rybalchenko, “Spatial electroluminescence distribution and internal quantum efficiency in substrate free InAsSbP/InAsSb double heterostructure”, Fizika i Tekhnika Poluprovodnikov, 57:6 (2023), 501–506   |
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2020 |
| 2. |
B. A. Matveev, V. I. Ratushnyi, A. Yu. Rybalchenko, “Localization of current flow in thermophotovoltaic converters based on InAsSbP/InAs double heterostructures”, Zhurnal Tekhnicheskoi Fiziki, 90:5 (2020), 835–840 ; Tech. Phys., 65:5 (2020), 799–804 |
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2019 |
| 3. |
B. A. Matveev, V. I. Ratushnyi, A. Yu. Rybalchenko, “Comparative characteristic analysis of thermophotovoltaic $p$-InAsSbP/$n$-InAs converters irradiated on $p$- and $n$-sides”, Zhurnal Tekhnicheskoi Fiziki, 89:8 (2019), 1233–1237 ; Tech. Phys., 64:8 (2019), 1164–1167 |
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2014 |
| 4. |
S. A. Karandashov, B. A. Matveev, V. I. Ratushnyi, M. A. Remennyi, A. Yu. Rybalchenko, N. M. Stus, “Current-voltage characteristics and photocurrent collection in radially symmetric front-surface-illuminated InAsSb(P) photodiodes”, Zhurnal Tekhnicheskoi Fiziki, 84:11 (2014), 52–57 ; Tech. Phys., 59:11 (2014), 1631–1635 |
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2012 |
| 5. |
N. D. Il'inskaya, A. L. Zakhgeim, S. A. Karandashov, B. A. Matveev, V. I. Ratushnyi, M. A. Remennyi, A. Yu. Rybalchenko, N. M. Stus, A. E. Chernyakov, “Front surface illuminated InAsSb photodiodes (long-wavelength cutoff $\lambda_{0.1}$ = 4.5 $\mu$m) operating at temperatures of 25–80$^\circ$C”, Fizika i Tekhnika Poluprovodnikov, 46:5 (2012), 708–713 ; Semiconductors, 46:5 (2012), 690–695 |
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| 6. |
S. A. Karandashov, B. A. Matveev, I. V. Mzhelskii, V. G. Polovinkin, M. A. Remennyi, A. Yu. Rybalchenko, N. M. Stus, “Nonuniformity in the spatial distribution of negative luminescence in InAsSb(P) photodiodes (long-wavelength cutoff $\lambda_{0.1}$ = 5.2 $\mu$m)”, Fizika i Tekhnika Poluprovodnikov, 46:2 (2012), 258–261 ; Semiconductors, 46:2 (2012), 247–250 |
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