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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
B. E. Umirzakov, M. K. Ruzibaeva, Z. A. Isakhanov, R. M. Yorkulov, “Formation of nanodimensional SiO$_{2}$ films on the surface of a free si/cu film system by O$_{2}^{+}$ ion implantation”, Zhurnal Tekhnicheskoi Fiziki, 89:6 (2019), 935–937   ; Tech. Phys., 64:6 (2019), 881–883 |
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2015 |
| 2. |
B. E. Umirzakov, Z. A. Isakhanov, M. K. Ruzibaeva, Z. È. Ìuhtarov, A. S. Khalmatov, “Analysis of profiles of atomic distribution over the depth of Si–Me free nanofilm systems”, Zhurnal Tekhnicheskoi Fiziki, 85:4 (2015), 123–125 ; Tech. Phys., 60:4 (2015), 600–602 |
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Z. A. Isakhanov, Yu. E. Umirzakov, M. K. Ruzibaeva, S. B. Donaev, “Effect of the O$_2^+$-ion bombardment on the TiN composition and structure”, Zhurnal Tekhnicheskoi Fiziki, 85:2 (2015), 156–158 ; Tech. Phys., 60:2 (2015), 313–315 |
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2013 |
| 4. |
B. E. Umirzakov, D. A. Tashmukhamedova, M. K. Ruzibaeva, A. K. Tashatov, S. B. Donaev, B. B. Mavlyanov, “Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods”, Zhurnal Tekhnicheskoi Fiziki, 83:9 (2013), 146–149 ; Tech. Phys., 58:9 (2013), 1383–1386 |
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2011 |
| 5. |
Z. A. Isakhanov, Z. È. Ìuhtarov, B. E. Umirzakov, M. K. Ruzibaeva, “Optimum ion implantation and annealing conditions for stimulating secondary negative ion emission”, Zhurnal Tekhnicheskoi Fiziki, 81:4 (2011), 117–120 ; Tech. Phys., 56:4 (2011), 546–549 |
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