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Publications in Math-Net.Ru |
Citations |
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2025 |
| 1. |
M. V. Ved, M. V. Dorokhin, I. L. Kalentyeva, P. B. Demina, A. V. Zdoroveyshchev, E. I. Malysheva, “Управление магнитными характеристиками спиновых светодиодов с магнитной системой “дельта-слой Mn–квантовая яма InGaAs/GaAs” за счет дельта-легирования акцепторной примесью”, Fizika Tverdogo Tela, 67:7 (2025), 1348–1353  |
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2024 |
| 2. |
E. I. Malysheva, P. B. Demina, M. V. Ved, M. V. Dorokhin, A. V. Zdoroveyshchev, A. V. Kudrin, N. V. Baidus, V. N. Trushin, “Modification of the functional characteristics of InGaAs/GaAs/Al$_2$O$_3$/CoPt spin light-emitting diodes”, Fizika Tverdogo Tela, 66:2 (2024), 184–189  |
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2020 |
| 3. |
M. V. Dorokhin, P. B. Demina, E. I. Malysheva, A. V. Kudrin, M. V. Ved, A. V. Zdoroveyshchev, “Long-range magnetic interaction in InGaAs/GaAs/$\delta$-$\langle$Mn$\rangle$ heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:2 (2020), 40–43 ; Tech. Phys. Lett., 46:1 (2020), 87–90 |
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2018 |
| 4. |
E. I. Malysheva, M. V. Dorokhin, Yu. A. Danilov, A. E. Parafin, M. V. Ved, A. V. Kudrin, A. V. Zdoroveyshchev, “Raising the operating temperature of (Ga,Mn)As/GaAs spin light emitting diodes by applying post-growth treatment”, Fizika Tverdogo Tela, 60:11 (2018), 2141–2146 |
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| 5. |
G. E. Yakovlev, M. V. Dorokhin, V. I. Zubkov, A. L. Dudin, A. V. Zdoroveyshchev, E. I. Malysheva, Yu. A. Danilov, B. N. Zvonkov, A. V. Kudrin, “Specific features of the electrochemical capacitance–voltage profiling of GaAs LED and pHEMT structures with quantum-confined regions”, Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 873–880 ; Semiconductors, 52:8 (2018), 1004–1011 |
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2017 |
| 6. |
E. I. Malysheva, M. V. Dorokhin, P. B. Demina, A. V. Zdoroveyshchev, A. V. Rykov, M. V. Ved, Yu. A. Danilov, “Control of circular polarization of electroluminescence in spin light-emitting diodes based on InGaAs/GaAs/$\delta$ $\langle$Mn$\rangle$ heterostructures”, Fizika Tverdogo Tela, 59:11 (2017), 2142–2147 ; Phys. Solid State, 59:11 (2017), 2162–2167 |
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| 7. |
M. V. Dorokhin, S. V. Zaitsev, A. V. Rykov, A. V. Zdoroveyshchev, E. I. Malysheva, Yu. A. Danilov, V. I. Zubkov, D. S. Frolov, G. E. Yakovlev, A. V. Kudrin, “Heterostructures with InGaAs/GaAs quantum dots doped with transition elements: II. Study of the circularly polarized luminescence”, Zhurnal Tekhnicheskoi Fiziki, 87:10 (2017), 1539–1544 ; Tech. Phys., 62:10 (2017), 1545–1550 |
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| 8. |
M. V. Dorokhin, A. V. Zdoroveyshchev, E. I. Malysheva, Yu. A. Danilov, “Heterostructures with InGaAs/GaAs quantum dots doped by transition elements. Part I: Photoluminescence properties”, Zhurnal Tekhnicheskoi Fiziki, 87:9 (2017), 1389–1394 ; Tech. Phys., 62:9 (2017), 1398–1402 |
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2016 |
| 9. |
E. I. Malysheva, M. V. Dorokhin, A. V. Zdoroveyshchev, M. V. Ved, “Tunneling and injection in ferromagnetic structures InGaAs/GaAs/(Ga,Mn)As and InGaAs/$n^{+}$-GaAs/(Ga,Mn)As”, Fizika Tverdogo Tela, 58:11 (2016), 2190–2194 ; Phys. Solid State, 58:11 (2016), 2271–2276 |
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| 10. |
A. V. Rykov, M. V. Dorokhin, E. I. Malysheva, P. B. Demina, O. V. Vikhrova, A. V. Zdoroveyshchev, “Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn $\delta$ layer”, Fizika i Tekhnika Poluprovodnikov, 50:1 (2016), 3–8 ; Semiconductors, 50:1 (2016), 1–7 |
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2015 |
| 11. |
E. I. Malysheva, M. V. Dorokhin, M. V. Ved, A. V. Kudrin, A. V. Zdoroveyshchev, “Circularly polarized electroluminescence of light-emitting InGaAs/GaAs (III, Mn)V diodes on the basis of structures with a tunneling barrier”, Fizika i Tekhnika Poluprovodnikov, 49:11 (2015), 1497–1500 ; Semiconductors, 49:11 (2015), 1448–1452 |
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| 12. |
N. V. Baidus, O. V. Vikhrova, B. N. Zvonkov, E. I. Malysheva, A. N. Trufanov, “Emission properties of InGaAs/GaAs heterostructures with quantum wells and dots after irradiation with neutrons”, Fizika i Tekhnika Poluprovodnikov, 49:3 (2015), 370–375 ; Semiconductors, 49:3 (2015), 358–363 |
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2014 |
| 13. |
M. V. Dorokhin, D. A. Pavlov, A. I. Bobrov, Yu. A. Danilov, P. B. Demina, B. N. Zvonkov, A. V. Zdoroveyshchev, A. V. Kudrin, N. V. Malekhonova, E. I. Malysheva, “Epitaxial growth of MnGa/GaAs layers for diodes with spin injection”, Fizika Tverdogo Tela, 56:10 (2014), 2062–2065 ; Phys. Solid State, 56:10 (2014), 2131–2134 |
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| 14. |
M. V. Dorokhin, E. I. Malysheva, B. N. Zvonkov, A. V. Zdoroveyshchev, Yu. A. Danilov, D. E. Nikolichev, A. V. Boryakov, S. Yu. Zubkov, “Spin injection of electrons in GaMnAs/GaAs/InGaAs light-emitting diode structures with a tunnel junction”, Zhurnal Tekhnicheskoi Fiziki, 84:12 (2014), 102–106 ; Tech. Phys., 59:12 (2014), 1839–1843 |
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2012 |
| 15. |
M. V. Dorokhin, E. I. Malysheva, A. V. Zdoroveyshchev, Yu. A. Danilov, A. V. Kudrin, “GaMnSb/InGaAs/GaAs heterostructure leds with a ferromagnetic injector layer”, Fizika i Tekhnika Poluprovodnikov, 46:12 (2012), 1554–1560 ; Semiconductors, 46:12 (2012), 1518–1523 |
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| 16. |
M. V. Dorokhin, E. I. Malysheva, A. V. Zdoroveyshchev, Yu. A. Danilov, “Spin-polarized light-emitting diodes based on heterostructures with a GaAs/InGaAs/GaAs quantum well and ferromagnetic GaMnSb injection layer”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:16 (2012), 69–77 ; Tech. Phys. Lett., 38:8 (2012), 764–767 |
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