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Publications in Math-Net.Ru |
Citations |
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2025 |
| 1. |
E. A. Lantsev, N. V. Malekhonova, A. V. Nokhrin, K. E. Smetanina, A. A. Murashov, A. V. Voronin, Yu. V. Blagoveshchenskii, A. V. Terent'ev, “Spark plasma sintering of fine-grained tungsten alloys W + 10%Ni”, Zhurnal Tekhnicheskoi Fiziki, 95:7 (2025), 1346–1355 |
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2023 |
| 2. |
E. A. Lantsev, N. V. Malekhonova, A. V. Nokhrin, K. E. Smetanina, A. A. Murashov, G. V. Shcherbak, A. V. Voronin, A. A. Atopshev, “Electropulse (“spark”) plasma sintering of tungsten and W+5%Ni nanopowders obtained by high-energy ball milling”, Zhurnal Tekhnicheskoi Fiziki, 93:11 (2023), 1550–1560 |
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2022 |
| 3. |
A. I. Bobrov, N. V. Baidus, S. V. Khazanova, A. P. Gorshkov, K. V. Sidorenko, A. N. Shushonov, N. V. Malekhonova, A. V. Nezhdanov, A. V. Zdoroveyshchev, V. N. Trushin, E. V. Ubyivovk, A. I. Okhapkin, D. S. Klement'ev, Z. Sh. Gasainiev, A. V. Kharlamov, “Design of tunnel-coupled quantum wells for a Mach–Zehnder scheme modulator construction”, Fizika i Tekhnika Poluprovodnikov, 56:9 (2022), 833–838 |
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2015 |
| 4. |
Yu. Yu. Romanova, E. P. Dodin, Yu. N. Nozdrin, A. A. Biryukov, N. V. Baidus, D. A. Pavlov, N. V. Malekhonova, “Structural, optical, and current investigations of superlattices with a complex AlGaAs-based unit cell”, Fizika i Tekhnika Poluprovodnikov, 49:1 (2015), 122–127 ; Semiconductors, 49:1 (2015), 118–123 |
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| 5. |
S. V. Khazanova, V. E. Degtyarov, N. V. Malekhonova, D. A. Pavlov, N. V. Baidus, “Influence of the technological parameters of growth on the characteristics of double tunnel-coupled InGaAs/GaAs quantum wells”, Fizika i Tekhnika Poluprovodnikov, 49:1 (2015), 58–62 ; Semiconductors, 49:1 (2015), 55–59 |
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| 6. |
N. V. Dikareva, O. V. Vikhrova, B. N. Zvonkov, N. V. Malekhonova, S. M. Nekorkin, A. V. Pirogov, D. A. Pavlov, “Effect of thermal annealing on the emission properties of heterostructures containing a quantum-confined GaAsSb layer”, Fizika i Tekhnika Poluprovodnikov, 49:1 (2015), 11–14 ; Semiconductors, 49:1 (2015), 9–12 |
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| 7. |
D. A. Pavlov, N. V. Baidus, A. I. Bobrov, O. V. Vikhrova, E. I. Volkova, B. N. Zvonkov, N. V. Malekhonova, D. S. Sorokin, “Distribution of elastic strains appearing in gallium arsenide as a result of doping with isovalent impurities of phosphorus and indium”, Fizika i Tekhnika Poluprovodnikov, 49:1 (2015), 3–5 ; Semiconductors, 49:1 (2015), 1–3 |
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2014 |
| 8. |
M. V. Dorokhin, D. A. Pavlov, A. I. Bobrov, Yu. A. Danilov, P. B. Demina, B. N. Zvonkov, A. V. Zdoroveyshchev, A. V. Kudrin, N. V. Malekhonova, E. I. Malysheva, “Epitaxial growth of MnGa/GaAs layers for diodes with spin injection”, Fizika Tverdogo Tela, 56:10 (2014), 2062–2065 ; Phys. Solid State, 56:10 (2014), 2131–2134 |
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| 9. |
E. S. Demidov, V. V. Podol'skii, V. P. Lesnikov, E. D. Pavlova, A. I. Bobrov, V. V. Karzanov, N. V. Malekhonova, A. A. Tronova, “Electron diffraction study of a high-temperature diamond-like silicon ferromagnet with the self-organized superlattice distribution of manganese impurity”, Pis'ma v Zh. Èksper. Teoret. Fiz., 100:11 (2014), 818–823 ; JETP Letters, 100:11 (2014), 719–723 |
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2013 |
| 10. |
D. S. Korolev, A. B. Kostyuk, A. I. Belov, A. N. Mikhaylov, Yu. A. Dudin, A. I. Bobrov, N. V. Malekhonova, D. A. Pavlov, D. I. Tetelbaum, “Influence of the ion synthesis and ion doping regimes on the effect of sensitization of erbium emission by silicon nanoclusters in silicon dioxide films”, Fizika Tverdogo Tela, 55:11 (2013), 2243–2249 ; Phys. Solid State, 55:11 (2013), 2361–2367 |
| 11. |
E. D. Pavlova, A. P. Gorshkov, A. I. Bobrov, N. V. Malekhonova, B. N. Zvonkov, “Study of heterostructures with a combined In(Ga)As/GaAs quantum dot/quantum well layer and a Mn $\delta$ layer”, Fizika i Tekhnika Poluprovodnikov, 47:12 (2013), 1617–1620 ; Semiconductors, 47:12 (2013), 1591–1594 |
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| 12. |
A. I. Bobrov, E. D. Pavlova, A. V. Kudrin, N. V. Malekhonova, “Structural studies of a ferromagnetic GaMnSb layer”, Fizika i Tekhnika Poluprovodnikov, 47:12 (2013), 1613–1616 ; Semiconductors, 47:12 (2013), 1587–1590 |
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2012 |
| 13. |
S. V. Khazanova, N. V. Baidus, B. N. Zvonkov, D. A. Pavlov, N. V. Malekhonova, V. E. Degtyarov, D. S. Smotrin, I. A. Bobrov, “Tunnel-coupled InGaAs/GaAs quantum wells: Structure, composition, and energy spectrum”, Fizika i Tekhnika Poluprovodnikov, 46:12 (2012), 1510–1514 ; Semiconductors, 46:12 (2012), 1476–1480 |
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