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Publications in Math-Net.Ru |
Citations |
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2025 |
| 1. |
V. A. Pozdeev, E. A. Vyacheslavova, O. P. Mikhaylov, A. A. Maksimova, A. S. Gudovskikh, A. V. Uvarov, “Study of the influence of spin-coating parameters and PEDOT:PSS suspension composition on the performance of $b$-Si/PEDOT:PSS solar cells”, Fizika i Tekhnika Poluprovodnikov, 59:5 (2025), 286–290 |
| 2. |
O. P. Mikhaylov, A. I. Baranov, A. A. Maksimova, A. V. Uvarov, E. A. Vyacheslavova, A. S. Gudovskikh, “Capacitance studies of solar cells based on nanostructured “black” silicon with a passivating $n$-GaP layer”, Fizika i Tekhnika Poluprovodnikov, 59:4 (2025), 223–226 |
| 3. |
A. S. Gudovskikh, A. I. Baranov, A. V. Uvarov, E. A. Vyacheslavova, A. A. Maksimova, D. A. Kirilenko, G. E. Yakovlev, V. I. Zubkov, “Studies of structural and electronic properties of InP layers formed by plasma-enhanced atomic layer deposition on a Si substrate with a GaP sublayer”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:9 (2025), 18–22 |
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2024 |
| 4. |
A. A. Maksimova, A. V. Uvarov, E. A. Vyacheslavova, A. I. Baranov, E. Ya. Yarchuk, A. S. Gudovskikh, “Surface-enhanced Raman spectroscopy on “black silicon” substrates”, Fizika Tverdogo Tela, 66:12 (2024), 2152–2154 |
| 5. |
A. V. Uvarov, V. A. Pozdeev, E. A. Vyacheslavova, A. A. Maksimova, A. I. Baranov, A. S. Gudovskikh, “Hybrid solar cells based on PEDOT:PSS/Si heterojunction obtained by spin coating on silicon fiber array”, Fizika i Tekhnika Poluprovodnikov, 58:10 (2024), 569–572 |
| 6. |
A. S. Gudovskikh, A. I. Baranov, A. V. Uvarov, E. A. Vyacheslavova, A. A. Maksimova, E. V. Nikitina, I. P. Sotnikov, “Properties of AlP/Si heterostructure fabricated by combination of plasma enhanced and atomic layer deposition”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:16 (2024), 3–6 |
| 7. |
O. P. Mikhaylov, A. I. Baranov, A. S. Gudovskikh, E. I. Terukov, A. V. Kochergin, N. R. Kostik, O. K. Ataboev, “Study of the influence of electron beam irradiation on the photoelectric and electrophysical properties of silicon HJT solar cells”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:2 (2024), 23–27 |
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2023 |
| 8. |
A. A. Maksimova, A. V. Uvarov, E. A. Vyacheslavova, A. I. Baranov, A. S. Gudovskikh, “Development of technology for plasma-enhanced chemical vapor deposition of boron phosphide at low temperatures”, Fizika Tverdogo Tela, 65:12 (2023), 2198–2200 |
| 9. |
E. Ya. Yarchuk, E. A. Vyacheslavova, M. Z. Shvarts, A. S. Gudovskikh, “Study of the possibility to increase annual electricity production using silicon solar cells with a nanostructured surface”, Fizika i Tekhnika Poluprovodnikov, 57:7 (2023), 522–525 |
| 10. |
A. S. Gudovskikh, A. V. Uvarov, A. I. Baranov, E. A. Vyacheslavova, A. A. Maksimova, D. A. Kirilenko, “Plasma enhanced atomic layer deposition of InP layers and multilayer InP/GaP structures on Si substrate”, Fizika i Tekhnika Poluprovodnikov, 57:6 (2023), 406–413 |
| 11. |
V. A. Pozdeev, A. V. Uvarov, A. S. Gudovskikh, E. A. Vyacheslavova, “The influence of chemical pretreatment on the passivation efficiency of textured silicon wafers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:23 (2023), 62–64 |
| 12. |
A. V. Uvarov, A. A. Maksimova, E. A. Vyacheslavova, A. I. Baranov, A. S. Gudovskikh, “Simulation of the PEDOT:PSS/Si heterostructure for flexible hybrid solar cells”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:23 (2023), 52–55 |
| 13. |
A. I. Baranov, A. V. Uvarov, A. A. Maksimova, E. A. Vyacheslavova, N. A. Kalyuzhnyy, S. A. Mintairov, R. A. Salii, G. E. Yakovlev, V. I. Zubkov, A. S. Gudovskikh, “Study of InP/GaP quantum wells grown by vapor phase epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:6 (2023), 16–20 |
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2022 |
| 14. |
E. I. Ageev, V. A. Iudin, Y. Sun, E. A. Petrova, P. N. Kustov, V. V. Yaroshenko, Yu. V. Mikhailova, A. S. Gudovskikh, I. S. Mukhin, D. A. Zuev, “Resonant hybrid metal␓dielectric nanostructures for local color generation”, Pis'ma v Zh. Èksper. Teoret. Fiz., 115:4 (2022), 213–217 ; JETP Letters, 115:4 (2022), 186–189 |
3
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| 15. |
A. V. Babichev, E. V. Pirogov, M. S. Sobolev, D. V. Denisov, N. A. Fominykh, A. I. Baranov, A. S. Gudovskikh, I. A. Melnichenko, P. A. Yunin, V. N. Nevedomskiy, M. V. Tokarev, B. Ya. Ber, A. G. Gladyshev, L. Ya. Karachinsky, I. I. Novikov, A. Yu. Egorov, “Study of active regions based on multiperiod GaAsN/InAs superlattice”, Fizika i Tekhnika Poluprovodnikov, 56:10 (2022), 1002–1010 |
| 16. |
A. V. Uvarov, V. A. Sharov, D. A. Kudriashov, A. S. Gudovskikh, “Impact of silicon wafer surface treatment on the morphology of GaP layers produced by plasma enhanced atomic layer deposition”, Fizika i Tekhnika Poluprovodnikov, 56:2 (2022), 213–220 |
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2021 |
| 17. |
D. A. Kudriashov, A. A. Maksimova, E. A. Vyacheslavova, A. V. Uvarov, I. A. Morozov, A. I. Baranov, A. O. Monastyrenko, A. S. Gudovskikh, “Study of the influence of design features of a magnetron sputtering chamber on the electrical and optical properties of indium-tin oxide films”, Fizika i Tekhnika Poluprovodnikov, 55:4 (2021), 360–364 ; Semiconductors, 55:4 (2021), 410–414 |
1
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| 18. |
D. A. Kudriashov, A. S. Gudovskikh, A. A. Maksimova, A. I. Baranov, A. V. Uvarov, I. A. Morozov, A. O. Monastyrenko, “Influence of the conditions for the formation of In$_{2}$O$_{3}$–SnO$_{2}$ films by magnetron sputtering on the charge carriers lifetime in silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:24 (2021), 31–33 |
| 19. |
A. I. Baranov, D. A. Kudriashov, A. V. Uvarov, I. A. Morozov, K. Yu. Shugurov, A. A. Maksimova, E. A. Vyacheslavova, A. S. Gudovskikh, “Study of Schottky diodes based on an array of silicon wires obtained by cryogenic dry etching”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021), 47–50 |
1
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| 20. |
A. I. Baranov, D. A. Kudriashov, A. V. Uvarov, I. A. Morozov, A. A. Maksimova, E. A. Vyacheslavova, A. S. Gudovskikh, “Admittance spectroscopy of solar cells based on selective contact MoO$_{x}$/Si junction”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:16 (2021), 24–27 ; Tech. Phys. Lett., 47:11 (2021), 785–788 |
3
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| 21. |
A. V. Uvarov, A. I. Baranov, E. A. Vyacheslavova, N. A. Kalyuzhnyy, D. A. Kudriashov, A. A. Maksimova, I. A. Morozov, S. A. Mintairov, R. A. Salii, A. S. Gudovskikh, “Formation of heterostructures of GaP/Si photoconverters by the combined method of MOVPE and PEALD”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021), 51–54 ; Tech. Phys. Lett., 47:10 (2021), 730–733 |
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| 22. |
A. S. Gudovskikh, D. A. Kudriashov, A. I. Baranov, A. V. Uvarov, I. A. Morozov, “A selective BP/Si contact formed by low-temperature plasma-enhanced atomic layer deposition”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:2 (2021), 49–51 ; Tech. Phys. Lett., 47:1 (2021), 96–98 |
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2020 |
| 23. |
D. A. Kudriashov, A. S. Gudovskikh, A. A. Maksimova, A. I. Baranov, A. V. Uvarov, I. A. Morozov, “Using MoO$_{x}$/$p$-Si selective contact for evaluation of the degradation of a near-surface region of silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020), 37–40 ; Tech. Phys. Lett., 46:12 (2020), 1245–1248 |
1
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2019 |
| 24. |
A. V. Uvarov, K. S. Zelentsov, A. S. Gudovskikh, “Effect of thermal annealing on the photovoltaic properties of GaP/Si heterostructures fabricated by plasma-enhanced atomic layer deposition”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1095–1102 ; Semiconductors, 53:8 (2019), 1075–1081 |
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2018 |
| 25. |
D. V. Permyakov, I. S. Sinev, S. K. Sychev, A. S. Gudovskikh, A. A. Bogdanov, A. V. Lavrinenko, A. K. Samusev, “Visualization of isofrequency contours of strongly localized waveguide modes in planar dielectric structures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 107:1 (2018), 12–17 ; JETP Letters, 107:1 (2018), 10–14 |
7
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| 26. |
D. A. Kudriashov, A. S. Gudovskikh, A. I. Baranov, “Precision chemical etching of GaP(NAs) epitaxial layers for the formation of monolithic optoelectronic devices”, Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1668–1674 ; Semiconductors, 52:13 (2018), 1775–1781 |
1
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| 27. |
V. F. Agekyan, E. V. Borisov, A. S. Gudovskikh, D. A. Kudriashov, A. O. Monastyrenko, A. Yu. Serov, N. G. Filosofov, “Formation of Cu$_{2}$O and ZnO crystal layers by magnetron assisted sputtering and their optical characterization”, Fizika i Tekhnika Poluprovodnikov, 52:3 (2018), 402–408 ; Semiconductors, 52:3 (2018), 383–389 |
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2017 |
| 28. |
D. A. Kudriashov, A. S. Gudovskikh, A. V. Babichev, A. V. Filimonov, A. M. Mozharov, V. F. Agekyan, E. V. Borisov, A. Yu. Serov, N. G. Filosofov, “Nanoscale Cu$_2$O films: Radio-frequency magnetron sputtering and structural and optical studies”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 111–115 ; Semiconductors, 51:1 (2017), 110–114 |
14
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| 29. |
S. B. Musalinov, A. P. Anzulevich, I. V. Bychkov, A. S. Gudovskikh, M. Z. Shvarts, “Influence of double- and triple-layer antireflection coatings on the formation of photocurrents in multijunction III–V solar cells”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 89–93 ; Semiconductors, 51:1 (2017), 88–92 |
6
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2016 |
| 30. |
A. M. Mozharov, D. A. Kudriashov, A. D. Bolshakov, G. E. Cirlin, A. S. Gudovskikh, I. S. Mukhin, “Numerical simulation of the properties of solar cells based on GaPNAs/Si heterostructures and GaN nanowires”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1543–1547 ; Semiconductors, 50:11 (2016), 1521–1525 |
8
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| 31. |
E. V. Nikitina, A. S. Gudovskikh, A. Lazarenko, E. V. Pirogov, M. S. Sobolev, K. S. Zelentsov, I. A. Morozov, A. Yu. Egorov, “GaAs/InGaAsN heterostructures for multi-junction solar cells”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 663–667 ; Semiconductors, 50:5 (2016), 652–655 |
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2015 |
| 32. |
A. S. Bolshakov, V. V. Chaldyshev, A. V. Babichev, D. A. Kudriashov, A. S. Gudovskikh, I. A. Morozov, M. S. Sobolev, E. V. Nikitina, “Study of multiple InAs/GaAs quantum-well structures by electroreflectance spectroscopy”, Fizika i Tekhnika Poluprovodnikov, 49:11 (2015), 1448–1452 ; Semiconductors, 49:11 (2015), 1400–1404 |
2
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| 33. |
M. S. Sobolev, A. Lazarenko, E. V. Nikitina, E. V. Pirogov, A. S. Gudovskikh, A. Yu. Egorov, “MBE growth of GaP on a Si substrate”, Fizika i Tekhnika Poluprovodnikov, 49:4 (2015), 569–572 ; Semiconductors, 49:4 (2015), 559–562 |
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| 34. |
A. I. Baranov, A. S. Gudovskikh, K. S. Zelentsov, E. V. Nikitina, A. Yu. Egorov, “Admittance spectroscopy of solar cells based on GaPNAs layers”, Fizika i Tekhnika Poluprovodnikov, 49:4 (2015), 534–538 ; Semiconductors, 49:4 (2015), 524–528 |
2
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| 35. |
D. A. Kudriashov, A. S. Gudovskikh, A. M. Mozharov, A. D. Bolshakov, I. S. Mukhin, Zh. I. Alferov, “Simulation of characteristics of double-junction solar cells based on ZnSiP$_2$ heterostructures on silicon substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:23 (2015), 15–23 ; Tech. Phys. Lett., 41:12 (2015), 1120–1123 |
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2014 |
| 36. |
I. A. Morozov, A. S. Gudovskikh, “Study of GaInP solar-cell interfaces by variable-flux spectral measurements”, Fizika i Tekhnika Poluprovodnikov, 48:4 (2014), 475–480 ; Semiconductors, 48:4 (2014), 459–464 |
1
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| 37. |
D. A. Kudriashov, A. S. Gudovskikh, E. V. Nikitina, A. Yu. Egorov, “Design of multijunction GaPNAs/Si heterostructure solar cells by computer simulation”, Fizika i Tekhnika Poluprovodnikov, 48:3 (2014), 396–401 ; Semiconductors, 48:3 (2014), 381–386 |
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2013 |
| 38. |
V. M. Emelyanov, A. S. Abramov, A. V. Bobyl', V. N. Verbitskii, A. S. Gudovskikh, E. M. Ershenko, S. A. Kudryashov, E. I. Terukov, O. I. Chosta, M. Z. Shvarts, “Analysis of light-induced degradation mechanisms in $\alpha$-Si:H/$\mu$-Si:H solar photovoltaics”, Fizika i Tekhnika Poluprovodnikov, 47:9 (2013), 1264–1269 ; Semiconductors, 47:9 (2013), 1252–1257 |
| 39. |
A. S. Gudovskikh, A. S. Abramov, A. V. Bobyl', V. N. Verbitskii, K. S. Zelentsov, E. M. Ershenko, D. A. Kudryashov, S. A. Kudryashov, A. O. Monastyrenko, A. R. Terra, E. I. Terukov, “Study of the properties of solar cells based on $a$-Si : H-$p$–$i$–$n$ structures by admittance spectroscopy”, Fizika i Tekhnika Poluprovodnikov, 47:8 (2013), 1094–1101 ; Semiconductors, 47:8 (2013), 1090–1096 |
3
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| 40. |
V. M. Emelyanov, A. S. Abramov, A. V. Bobyl', A. S. Gudovskikh, D. L. Orekhov, E. I. Terukov, N. Kh. Timoshina, O. I. Chosta, M. Z. Shvarts, “Study of the light-induced degradation of tandem $\alpha$-Si : H/$\mu c$-Si : H photovoltaic converters”, Fizika i Tekhnika Poluprovodnikov, 47:5 (2013), 667–674 ; Semiconductors, 47:5 (2013), 679–685 |
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| 41. |
A. I. Baranov, A. S. Gudovskikh, E. V. Nikitina, A. Yu. Egorov, “Photoelectric properties of solar cells based on GaPNAs/GaP heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:24 (2013), 88–94 ; Tech. Phys. Lett., 39:12 (2013), 1117–1120 |
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