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Publications in Math-Net.Ru |
Citations |
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2024 |
| 1. |
M. È. Labzovskaya, B. V. Novikov, A. Yu. Serov, S. V. Mikushev, S. A. Kadinskaya, V. M. Kondratiev, A. D. Bolshakov, A. I. Lihachev, A. V. Nashchekin, Yu. B. Samsonenko, I. V. Shtrom, “Random laser generation in ZnO nanocrystals grown by hydrothermal method”, Fizika Tverdogo Tela, 66:1 (2024), 17–21 |
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2019 |
| 2. |
N. R. Grigor'eva, I. V. Shtrom, R. V. Grigor'ev, I. P. Soshnikov, R. R. Reznik, Yu. B. Samsonenko, N. V. Sibirev, G. E. Cirlin, “The influence of EL2 centers on the photoelectric response of an array of radial GaAs/AlGaAs nanowires”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:16 (2019), 37–40 ; Tech. Phys. Lett., 45:8 (2019), 835–838 |
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2018 |
| 3. |
G. E. Cirlin, R. R. Reznik, Yu. B. Samsonenko, A. I. Khrebtov, K. P. Kotlyar, I. V. Ilkiv, I. P. Sotnikov, D. A. Kirilenko, N. V. Kryzhanovskaya, “Phosphorus-based nanowires grown by molecular-beam epitaxy on silicon”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1304–1307 ; Semiconductors, 52:11 (2018), 1416–1419 |
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| 4. |
G. E. Cirlin, R. R. Reznik, I. V. Shtrom, A. I. Khrebtov, Yu. B. Samsonenko, S. A. Kukushkin, T. Kasama, N. Akopian, “Hybrid GaAs/AlGaAs nanowire – quantum dot system for single photon sources”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 469 ; Semiconductors, 52:4 (2018), 462–464 |
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| 5. |
I. V. Shtrom, N. V. Sibirev, E. V. Ubyivovk, Yu. B. Samsonenko, A. I. Khrebtov, R. R. Reznik, A. D. Bouravlev, G. E. Cirlin, “GaP/Si(111) nanowire crystals synthesized by molecular-beam epitaxy with switching between the hexagonal and cubic phases”, Fizika i Tekhnika Poluprovodnikov, 52:1 (2018), 5–9 ; Semiconductors, 52:1 (2018), 1–5 |
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2017 |
| 6. |
I. V. Shtrom, N. V. Sibirev, E. V. Ubyivovk, Yu. B. Samsonenko, A. I. Khrebtov, R. R. Reznik, A. D. Bouravlev, G. E. Cirlin, “GaP/Si (111) nanowire crystals synthesized by molecular-beam epitaxy with switching between the hexagonal and cubic phases”, Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1587 ; Semiconductors, 52:1 (2018), 1–5 |
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| 7. |
V. G. Talalaev, V. I. Shtrom, Yu. B. Samsonenko, A. I. Khrebtov, A. D. Bouravlev, G. E. Cirlin, “Directional emission from beryllium doped GaAs/AlGaAs nanowires”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:17 (2017), 71–77 ; Tech. Phys. Lett., 43:9 (2017), 811–813 |
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2016 |
| 8. |
I. V. Shtrom, A. D. Bouravlev, Yu. B. Samsonenko, A. I. Khrebtov, I. P. Sotnikov, R. R. Reznik, G. E. Cirlin, V. Dhaka, A. Perros, H. Lipsanen, “Surface passivation of GaAs nanowires by the atomic layer deposition of AlN”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1644–1646 ; Semiconductors, 50:12 (2016), 1619–1621 |
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| 9. |
G. E. Cirlin, I. V. Shtrom, R. R. Reznik, Yu. B. Samsonenko, A. I. Khrebtov, A. D. Bouravlev, I. P. Sotnikov, “Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1441–1444 ; Semiconductors, 50:11 (2016), 1421–1424 |
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| 10. |
A. E. Zhukov, G. E. Cirlin, R. R. Reznik, Yu. B. Samsonenko, A. I. Khrebtov, M. A. Kaliteevskii, K. A. Ivanov, N. V. Kryzhanovskaya, M. V. Maksimov, Zh. I. Alferov, “Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 674–678 ; Semiconductors, 50:5 (2016), 662–666 |
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2015 |
| 11. |
V. N. Trukhin, A. S. Buyskih, A. D. Bouravlev, I. A. Mustafin, Yu. B. Samsonenko, A. V. Trukhin, G. E. Cirlin, M. A. Kaliteevski, D. A. Zeze, A. J. Gallant, “Generation of THz radiation by AlGaAs nanowires”, Pis'ma v Zh. Èksper. Teoret. Fiz., 102:5 (2015), 348–353 ; JETP Letters, 102:5 (2015), 316–320 |
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| 12. |
R. V. Grigor'ev, I. V. Shtrom, N. R. Grigor'eva, B. V. Novikov, I. P. Sotnikov, Yu. B. Samsonenko, A. I. Khrebtov, A. D. Bouravlev, G. È. Cirlin, “Photoelectric properties of an array of axial GaAs/AlGaAs nanowires”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:9 (2015), 71–79 ; Tech. Phys. Lett., 41:5 (2015), 443–447 |
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2014 |
| 13. |
A. D. Bouravlev, N. V. Sibirev, E. P. Gilstein, P. N. Brunkov, I. S. Mukhin, M. Tchernycheva, A. I. Khrebtov, Yu. B. Samsonenko, G. È. Cirlin, “Study of the electrical properties of individual (Ga,Mn)As nanowires”, Fizika i Tekhnika Poluprovodnikov, 48:3 (2014), 358–363 ; Semiconductors, 48:3 (2014), 344–349 |
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| 14. |
A. I. Khrebtov, V. G. Talalaev, Yu. B. Samsonenko, P. Werner, V. V. Rutskaya, M. V. Artem'ev, G. È. Cirlin, “A hybrid system of GaAs whisker nanocrystals and PbS quantum dots on silicon substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:13 (2014), 36–43 ; Tech. Phys. Lett., 40:7 (2014), 558–561 |
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2013 |
| 15. |
M. B. Smirnov, A. O. Koshkin, S. V. Karpov, B. V. Novikov, A. N. Smirnov, I. V. Shtrom, G. È. Cirlin, A. D. Bouravlev, Yu. B. Samsonenko, “Computer simulation of the structure and Raman spectra of GaAs polytypes”, Fizika Tverdogo Tela, 55:6 (2013), 1132–1141 ; Phys. Solid State, 55:6 (2013), 1220–1230 |
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| 16. |
I. P. Sotnikov, V. A. Petrov, G. È. Cirlin, Yu. B. Samsonenko, A. D. Bouravlev, Yu. M. Zadiranov, N. D. Il'inskaya, S. I. Troshkov, “Growth specifics of GaAs nanowires in mesa”, Fizika Tverdogo Tela, 55:4 (2013), 645–649 ; Phys. Solid State, 55:4 (2013), 702–706 |
| 17. |
N. V. Sibirev, A. D. Bouravlev, Yu. M. Trushkov, D. V. Beznasyuk, Yu. B. Samsonenko, G. È. Cirlin, “Effect of an arsenic flux on the molecular-beam epitaxy of self-catalytic (Ga,Mn)As nanowire crystals”, Fizika i Tekhnika Poluprovodnikov, 47:10 (2013), 1425–1430 ; Semiconductors, 47:10 (2013), 1416–1421 |
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| 18. |
A. D. Bouravlev, V. N. Nevedomskiy, E. V. Ubyivovk, V. F. Sapega, A. I. Khrebtov, Yu. B. Samsonenko, G. È. Cirlin, V. M. Ustinov, “(In,Mn)As quantum dots: Molecular-beam epitaxy and optical properties”, Fizika i Tekhnika Poluprovodnikov, 47:8 (2013), 1033–1036 ; Semiconductors, 47:8 (2013), 1037–1040 |
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| 19. |
A. D. Bouravlev, D. V. Beznasyuk, E. P. Gilstein, M. Tchernycheva, A. De Luna Bugallo, L. Rigutti, L. Yu, Yu. Proskuryakov, I. V. Shtrom, M. A. Timofeeva, Yu. B. Samsonenko, A. I. Khrebtov, G. È. Cirlin, “Photovoltaic properties of GaAs:Be nanowire arrays”, Fizika i Tekhnika Poluprovodnikov, 47:6 (2013), 797–801 ; Semiconductors, 47:6 (2013), 808–811 |
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2012 |
| 20. |
V. G. Talalaev, A. A. Tonkikh, N. D. Zakharov, A. V. Senichev, J. W. Tomm, P. Werner, B. V. Novikov, L. V. Asryan, B. Fuhrmann, J. Schilling, H. S. Leipner, A. D. Bouravlev, Yu. B. Samsonenko, A. I. Khrebtov, I. P. Sotnikov, G. È. Cirlin, “Light-emitting tunneling nanostructures based on quantum dots in a Si and GaAs matrix”, Fizika i Tekhnika Poluprovodnikov, 46:11 (2012), 1492–1503 ; Semiconductors, 46:11 (2012), 1460–1470 |
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| 21. |
A. D. Bouravlev, A. A. Zaitsev, P. N. Brunkov, V. F. Sapega, A. I. Khrebtov, Yu. B. Samsonenko, G. È. Cirlin, V. G. Dubrovskii, V. M. Ustinov, “Studying the formation of self-assembled (In,Mn)As quantum dots”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:10 (2012), 21–27 ; Tech. Phys. Lett., 38:5 (2012), 460–462 |
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