S. T. Abraeva, D. A. Tashmukhamedova, M. B. Yusupjanova, B. E. Umirzakov, “Peculiarities of photoelectron spectra of Ge implanted with Na$^+$ ions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:1 (2023), 27–30
2022
2.
D. A. Tashmukhammedova, B. E. Umirzakov, Y. S. Ergashov, M. B. Yusupjanova, R. M. Yorkulov, “Influence of Ba atom adsorption and implantation of Ba$^+$ ions on the electronic structure of single crystalline Ge”, Zhurnal Tekhnicheskoi Fiziki, 92:4 (2022), 638–642
3.
B. E. Umirzakov, M. T. Normuradov, D. A. Normurodov, I. R. Bekpulatov, “Composition and electronic structure of hidden nanoscale phases and layers of BaSi$_2$ formed in the near-surface of Si”, Fizika i Tekhnika Poluprovodnikov, 56:5 (2022), 491–494
4.
I. H. Turapov, I. R. Bekpulatov, A. K. Tashatov, B. E. Umirzakov, “Influence of preliminary ion bombardment on the formation of Co and CoSi$_2$ nanofilms on Si surface during solid-phase deposition”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:5 (2022), 27–29
2021
5.
G. Abdurakhmanov, V. I. Shimanski, B. L. Oksengendler, B. E. Umirzakov, A. N. Urokov, “Pseudogap, nanocrystals and electrical conductivity of doped silicate glass”, Zhurnal Tekhnicheskoi Fiziki, 91:2 (2021), 281–286; Tech. Phys., 66:2 (2021), 269–274
B. E. Umirzakov, S. B. Donaev, R. M. Yorkulov, R. Kh. Ashurov, V. M. Rotstein, “Composition and morphology of Si(111) surface with SiO$_{2}$ film of different thickness”, Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 1045–1048
7.
Z. A. Isakhanov, B. E. Umirzakov, S. S. Nasriddinov, Z. E. Ìuhtarov, R. M. Yorkulov, “Study of the critical angle of channeling of active metal ions through thin aluminum films”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:23 (2021), 12–14
8.
B. E. Umirzakov, J. Sh. Sodikjanov, D. A. Tashmukhamedova, A. A. Abduvaitov, E. M. Rabbimov, “Adsorption of Ba atoms influences the composition, emission, and optical properties of CdS single crystals”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:12 (2021), 3–5; Tech. Phys. Lett., 47:8 (2021), 620–623
B. E. Umirzakov, Z. A. Isakhanov, G. Kh. Allayarova, R. M. Yorkulov, “The effect of stepwise postimplantation annealing on the composition and structure of silicon surface layers implanted with alkali metal ions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:1 (2021), 15–19; Tech. Phys. Lett., 47:1 (2021), 11–15
2020
10.
B. E. Umirzakov, D. A. Tashmukhamedova, S. T. Gulyamova, G. Kh. Allayarova, “Effect of the Ba$^+$ ion implantation on the composition and electronic properties of MoO$_{3}$/Mo (111) films”, Zhurnal Tekhnicheskoi Fiziki, 90:5 (2020), 831–834; Tech. Phys., 65:5 (2020), 795–798
Z. A. Isakhanov, I. O. Kosimov, B. E. Umirzakov, R. M. Yorkulov, “Modification of the surface properties of free Si–Cu films by implantation of active metal ions”, Zhurnal Tekhnicheskoi Fiziki, 90:1 (2020), 123–127; Tech. Phys., 65:1 (2020), 114–117
B. E. Umirzakov, D. A. Tashmukhamedova, A. K. Tashatov, N. M. Mustafoeva, D. M. Muradkabilov, “Effect of the disordering of thin surface layers on the electronic and optical properties of Si(111)”, Fizika i Tekhnika Poluprovodnikov, 54:11 (2020), 1211–1216; Semiconductors, 54:11 (2020), 1424–1429
S. B. Donaev, B. E. Umirzakov, “Effect of the implantation of Al$^+$ ions on the composition, electronic and crystalline structure of the GaP(111) surface”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 716–719; Semiconductors, 54:8 (2020), 860–862
D. A. Tashmukhamedova, M. B. Yusupjanova, G. Kh. Allayarova, B. E. Umirzakov, “Crystal structure and band gap of nanoscale phases of Si formed at various depths of the near-surface region of SiO$_{2}$”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020), 32–34; Tech. Phys. Lett., 46:10 (2020), 972–975
S. B. Donaev, B. E. Umirzakov, N. M. Mustafaeva, “Emissivity of laser-activated Pd–Ba alloy”, Zhurnal Tekhnicheskoi Fiziki, 89:10 (2019), 1626–1629; Tech. Phys., 64:10 (2019), 1541–1543
S. Zh. Nimatov, B. E. Umirzakov, F. Ya. Khudaikulov, D. S. Rumi, “Variation of the crystal structure on Si(111) surface induced by ion bombardment and subsequent annealing”, Zhurnal Tekhnicheskoi Fiziki, 89:10 (2019), 1611–1614; Tech. Phys., 64:10 (2019), 1527–1529
B. E. Umirzakov, S. B. Donaev, N. M. Mustafaeva, “Electronic and optical properties of GaAlAs/GaAs thin films”, Zhurnal Tekhnicheskoi Fiziki, 89:10 (2019), 1589–1591; Tech. Phys., 64:10 (2019), 1506–1508
B. E. Umirzakov, D. A. Tashmukhamedova, M. A. Tursunov, Y. S. Ergashov, G. Kh. Allayarova, “Escape depth of secondary and photoelectrons from CdTe films with a Ba film”, Zhurnal Tekhnicheskoi Fiziki, 89:7 (2019), 1115–1117; Tech. Phys., 64:7 (2019), 1051–1054
B. E. Umirzakov, M. K. Ruzibaeva, Z. A. Isakhanov, R. M. Yorkulov, “Formation of nanodimensional SiO$_{2}$ films on the surface of a free si/cu film system by O$_{2}^{+}$ ion implantation”, Zhurnal Tekhnicheskoi Fiziki, 89:6 (2019), 935–937; Tech. Phys., 64:6 (2019), 881–883
B. E. Umirzakov, D. A. Tashmukhamedova, A. K. Tashatov, N. M. Mustafoeva, “Electronic and optical properties of NiSi$_{2}$/Si nanofilms”, Zhurnal Tekhnicheskoi Fiziki, 89:5 (2019), 759–761; Tech. Phys., 64:5 (2019), 708–710
B. E. Umirzakov, R. Kh. Ashurov, S. B. Donaev, “The morphology and electronic properties of si nanoscale structures on a CaF$_{2}$ surface”, Zhurnal Tekhnicheskoi Fiziki, 89:2 (2019), 264–267; Tech. Phys., 64:2 (2019), 232–235
B. E. Umirzakov, D. A. Tashmukhamedova, G. Kh. Allayarova, J. Sh. Sodikjanov, “The effect of the formation of silicides on the resistivity of silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:7 (2019), 49–51; Tech. Phys. Lett., 45:4 (2019), 356–358
Y. S. Ergashov, B. E. Umirzakov, “Structure and properties of a bilayer nanodimensional CoSi$_{2}$/Si/CoSi$_{2}$/Si system obtained by ion implantation”, Zhurnal Tekhnicheskoi Fiziki, 88:12 (2018), 1859–1862; Tech. Phys., 63:12 (2018), 1820–1823
Kh. Kh. Boltaev, J. Sh. Sodikjanov, D. A. Tashmukhamedova, B. E. Umirzakov, “Composition and structure of Ga$_{1-x}$Na$_{x}$As nanolayers produced near the GaAs surface by Na$^+$ implantation”, Zhurnal Tekhnicheskoi Fiziki, 87:12 (2017), 1884–1886; Tech. Phys., 62:12 (2017), 1882–1884
Y. S. Ergashov, Z. A. Isakhanov, B. E. Umirzakov, “Transmission of electromagnetic waves through thin Cu films”, Zhurnal Tekhnicheskoi Fiziki, 86:6 (2016), 156–158; Tech. Phys., 61:6 (2016), 953–955
M. B. Yusupjanova, D. A. Tashmukhamedova, B. E. Umirzakov, “Composition, morphology, and electronic structure of the nanophases created on the SiO$_{2}$ Surface by Ar$^{+}$ ion bombardment”, Zhurnal Tekhnicheskoi Fiziki, 86:4 (2016), 148–150; Tech. Phys., 61:4 (2016), 628–630
Z. È. Ìuhtarov, Z. A. Isakhanov, B. E. Umirzakov, T. Kodirov, E. S. Ergashev, “Effect of implantation of active metal ions on the elemental and chemical compositions of the CdTe surface”, Zhurnal Tekhnicheskoi Fiziki, 85:12 (2015), 146–149; Tech. Phys., 60:12 (2015), 1880–1883
S. B. Donaev, B. E. Umirzakov, D. A. Tashmukhamedova, “Electronic structure of Ga$_{1-x}$Al$_x$As nanostructures grown on the GaAs surface by ion implantation”, Zhurnal Tekhnicheskoi Fiziki, 85:10 (2015), 148–151; Tech. Phys., 60:10 (2015), 1563–1566
B. E. Umirzakov, Z. A. Isakhanov, M. K. Ruzibaeva, Z. È. Ìuhtarov, A. S. Khalmatov, “Analysis of profiles of atomic distribution over the depth of Si–Me free nanofilm systems”, Zhurnal Tekhnicheskoi Fiziki, 85:4 (2015), 123–125; Tech. Phys., 60:4 (2015), 600–602
B. E. Umirzakov, D. A. Tashmukhamedova, M. K. Ruzibaeva, A. K. Tashatov, S. B. Donaev, B. B. Mavlyanov, “Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods”, Zhurnal Tekhnicheskoi Fiziki, 83:9 (2013), 146–149; Tech. Phys., 58:9 (2013), 1383–1386
B. E. Umirzakov, D. A. Tashmukhamedova, D. M. Muradkabilov, Kh. Kh. Boltaev, “Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF$_2$ surface layers using low-energy ion implantation”, Zhurnal Tekhnicheskoi Fiziki, 83:6 (2013), 66–70
Z. A. Isakhanov, Z. È. Ìuhtarov, B. E. Umirzakov, M. K. Ruzibaeva, “Optimum ion implantation and annealing conditions for stimulating secondary negative ion emission”, Zhurnal Tekhnicheskoi Fiziki, 81:4 (2011), 117–120; Tech. Phys., 56:4 (2011), 546–549
