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Publications in Math-Net.Ru |
Citations |
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2018 |
| 1. |
M. N. Solovan, G. O. Andrushchak, A. I. Mostovyi, T. T. Kovaliuk, V. V. Brus, P. D. Mar'yanchuk, “Graphite/$p$-SiC Schottky diodes prepared by transferring drawn graphite films onto SiC”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 248–253 ; Semiconductors, 52:2 (2018), 236–241 |
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2017 |
| 2. |
M. N. Solovan, A. I. Mostovyi, S. V. Bilichuk, F. Pinna, T. T. Kovaliuk, V. V. Brus, E. V. Maistruk, I. G. Orletskii, P. D. Mar'yanchuk, “Structural and optical properties of Cu$_{2}$ZnSn(S,Se)$_{4}$ films obtained by magnetron sputtering of a Cu$_{2}$ZnSn alloy target”, Fizika Tverdogo Tela, 59:8 (2017), 1619–1623 ; Phys. Solid State, 59:8 (2017), 1643–1647 |
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| 3. |
M. M. Solovan, V. V. Brus, A. I. Mostovyi, P. D. Mar'yanchuk, I. G. Orletskyi, T. T. Kovaliuk, S. L. Abashin, “Silicon nanowire array architecture for heterojunction electronics”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 569 ; Semiconductors, 51:4 (2017), 542–548 |
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2016 |
| 4. |
I. G. Orletskii, P. D. Mar'yanchuk, M. N. Solovan, V. V. Brus, E. V. Maistruk, D. P. Kozyarskii, S. L. Abashin, “Optical properties and mechanisms of current flow in Cu$_{2}$ZnSnS$_{4}$ films prepared by spray pyrolysis”, Fizika Tverdogo Tela, 58:5 (2016), 1024–1029 ; Phys. Solid State, 58:5 (2016), 1058–1064 |
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| 5. |
I. G. Orletskii, P. D. Mar'yanchuk, E. V. Maistruk, M. N. Solovan, V. V. Brus, “Low-temperature spray-pyrolysis of FeS$_2$ films and their electrical and optical properties”, Fizika Tverdogo Tela, 58:1 (2016), 39–43 ; Phys. Solid State, 58:1 (2016), 37–41 |
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| 6. |
M. N. Solovan, A. I. Mostovyi, V. V. Brus, E. V. Maistruk, P. D. Mar'yanchuk, “Electrical and photoelectric properties of $n$-ÒiN/$p$-Hg$_{3}$In$_{2}$Te$_{6}$ heterostructures”, Fizika i Tekhnika Poluprovodnikov, 50:8 (2016), 1041–1046 ; Semiconductors, 50:8 (2016), 1020–1024 |
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| 7. |
I. G. Orletskii, M. I. Ilashschuk, V. V. Brus, P. D. Mar'yanchuk, M. M. Solovan, Z. D. Kovalyuk, “Electrical and photoelectric properties of the TiN/$p$-InSe heterojunction”, Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 339–343 ; Semiconductors, 50:3 (2016), 334–338 |
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2014 |
| 8. |
V. V. Brus, M. N. Solovan, E. V. Maistruk, I. P. Kozyarskii, P. D. Mar'yanchuk, K. S. Ulyanytsky, J. Rappich, “Specific features of the optical and electrical properties of polycrystalline CdTe films grown by the thermal evaporation method”, Fizika Tverdogo Tela, 56:10 (2014), 1886–1890 ; Phys. Solid State, 56:10 (2014), 1947–1951 |
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| 9. |
M. N. Solovan, V. V. Brus, P. D. Mar'yanchuk, “Specific features of the recombination loss of the photocurrent in $n$-TiN/$p$-Si anisotype heterojunctions”, Fizika i Tekhnika Poluprovodnikov, 48:11 (2014), 1540–1542 ; Semiconductors, 48:11 (2014), 1504–1506 |
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| 10. |
A. I. Mostovyi, V. V. Brus, P. D. Mar'yanchuk, “Charge-transport mechanisms in heterostructures based on TiO$_2$ : Cr$_2$O$_3$ thin films”, Fizika i Tekhnika Poluprovodnikov, 48:9 (2014), 1205–1208 ; Semiconductors, 48:9 (2014), 1174–1177 |
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| 11. |
V. V. Brus, I. G. Orletskii, M. I. Ilashschuk, P. D. Mar'yanchuk, “Electrical properties of thin-film semiconductor heterojunctions $n$-TiO$_2$/$p$-CuInS$_2$”, Fizika i Tekhnika Poluprovodnikov, 48:8 (2014), 1075–1079 ; Semiconductors, 48:8 (2014), 1046–1050 |
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| 12. |
M. N. Solovan, V. V. Brus, P. D. Mar'yanchuk, “Electrical properties of anisotype $n$-CdO/$p$-Si heterojunctions”, Fizika i Tekhnika Poluprovodnikov, 48:7 (2014), 926–931 ; Semiconductors, 48:7 (2014), 899–904 |
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| 13. |
V. V. Brus, M. I. Ilashschuk, I. G. Orletskii, P. D. Mar'yanchuk, K. S. Ulyanytsky, “Electrical properties of MOS diodes In/TiO$_2$/$p$-CdTe”, Fizika i Tekhnika Poluprovodnikov, 48:4 (2014), 504–508 ; Semiconductors, 48:4 (2014), 487–491 |
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| 14. |
M. N. Solovan, V. V. Brus, P. D. Mar'yanchuk, “Isotype surface-barrier $n$-TiN/$n$-Si heterostructure”, Fizika i Tekhnika Poluprovodnikov, 48:2 (2014), 232–236 ; Semiconductors, 48:2 (2014), 219–223 |
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| 15. |
M. N. Solovan, E. V. Maistruk, V. V. Brus, P. D. Mar'yanchuk, “Electrical properties of anisotype $n$-TiN/$p$-Hg$_3$In$_2$Te$_6$ heterojunctions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:6 (2014), 1–6 ; Tech. Phys. Lett., 40:3 (2014), 231–233 |
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2013 |
| 16. |
M. N. Solovan, V. V. Brus, P. D. Mar'yanchuk, T. T. Kovaliuk, J. Rappich, M. Gluba, “Kinetic properties of TiN thin films prepared by reactive magnetron sputtering”, Fizika Tverdogo Tela, 55:11 (2013), 2123–2127 ; Phys. Solid State, 55:11 (2013), 2234–2238 |
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| 17. |
M. N. Solovan, V. V. Brus, P. D. Mar'yanchuk, “Electrical and photoelectric properties of anisotype $n$-TiN/$p$-Si heterojunctions”, Fizika i Tekhnika Poluprovodnikov, 47:9 (2013), 1185–1190 ; Semiconductors, 47:9 (2013), 1174–1179 |
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| 18. |
A. I. Mostovyi, V. V. Brus, P. D. Mar'yanchuk, “Charge transport mechanisms in anisotype $n$-ÒiÎ$_2$/$p$-Si heterostructures”, Fizika i Tekhnika Poluprovodnikov, 47:6 (2013), 788–792 ; Semiconductors, 47:6 (2013), 799–803 |
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2012 |
| 19. |
V. V. Brus, Z. D. Kovalyuk, P. D. Mar'yanchuk, “Optical properties of TiÎ$_2$–MnO$_2$ thin films prepared by electron-beam evaporation”, Zhurnal Tekhnicheskoi Fiziki, 82:8 (2012), 110–113 ; Tech. Phys., 57:8 (2012), 1148–1151 |
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| 20. |
V. V. Brus, M. I. Ilashschuk, V. V. Khomyak, Z. D. Kovalyuk, P. D. Mar'yanchuk, K. S. Ulyanytsky, “Electrical properties of anisotype heterojunctions $n$-CdZnO/$p$-CdTe”, Fizika i Tekhnika Poluprovodnikov, 46:9 (2012), 1175–1180 ; Semiconductors, 46:9 (2012), 1152–1157 |
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| 21. |
V. V. Brus, “On the impedance spectroscopy of structures with a potential barrier”, Fizika i Tekhnika Poluprovodnikov, 46:8 (2012), 1035–1038 ; Semiconductors, 46:8 (2012), 1012–1015 |
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