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Publications in Math-Net.Ru |
Citations |
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2018 |
| 1. |
E. S. Kolodeznyi, A. S. Kurochkin, S. S. Rochas, A. V. Babichev, I. I. Novikov, A. G. Gladyshev, L. Ya. Karachinsky, A. V. Savel'ev, A. Yu. Egorov, D. V. Denisov, “On the impact of barrier-layer doping on the photoluminescence efficiency of InGaAlAs/InGaAs/InP strained-layer heterostructures”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 1034–1037 ; Semiconductors, 52:9 (2018), 1156–1159 |
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2016 |
| 2. |
I. I. Novikov, L. Ya. Karachinsky, E. S. Kolodeznyi, V. E. Bugrov, A. S. Kurochkin, A. G. Gladyshev, A. V. Babichev, I. M. Gadzhiev, M. S. Buyalo, Yu. M. Zadiranov, A. A. Usikova, Yu. M. Shernyakov, A. V. Savel'ev, I. A. Nyapshaev, A. Yu. Egorov, “On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1429–1433 ; Semiconductors, 50:10 (2016), 1412–1415 |
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2015 |
| 3. |
A. V. Savel'ev, V. V. Korenev, M. V. Maksimov, A. E. Zhukov, “Spatial hole burning and spectral stability of a quantum-dot laser”, Fizika i Tekhnika Poluprovodnikov, 49:11 (2015), 1546–1552 ; Semiconductors, 49:11 (2015), 1499–1505 |
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| 4. |
A. E. Zhukov, N. V. Kryzhanovskaya, M. V. Maksimov, A. A. Lipovskii, A. V. Savel'ev, I. I. Shostak, È. I. Moiseev, Yu. V. Kudashova, M. M. Kulagina, S. I. Troshkov, “Thermal resistance of ultra-small-diameter disk microlasers”, Fizika i Tekhnika Poluprovodnikov, 49:5 (2015), 688–692 ; Semiconductors, 49:5 (2015), 674–678 |
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2014 |
| 5. |
A. E. Zhukov, N. V. Kryzhanovskaya, M. V. Maksimov, A. A. Lipovskii, A. V. Savel'ev, A. A. Bogdanov, I. I. Shostak, È. I. Moiseev, D. V. Karpov, J. Laukkanen, J. Tommila, “Lasing in microdisks of ultrasmall diameter”, Fizika i Tekhnika Poluprovodnikov, 48:12 (2014), 1666–1670 ; Semiconductors, 48:12 (2014), 1626–1630 |
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2013 |
| 6. |
F. I. Zubov, Yu. M. Shernyakov, M. V. Maksimov, A. E. Zhukov, D. A. Livshits, A. S. Payusov, A. M. Nadtochiy, A. V. Savel'ev, N. V. Kryzhanovskaya, N. Yu. Gordeev, “Spectral dependence of the linewidth enhancement factor in quantum dot lasers”, Fizika i Tekhnika Poluprovodnikov, 47:12 (2013), 1681–1686 ; Semiconductors, 47:12 (2013), 1656–1660 |
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| 7. |
V. A. Shchukin, N. N. Ledentsov, L. Ya. Karachinsky, S. A. Blokhin, I. I. Novikov, N. A. Bogoslovskii, A. V. Savel'ev, “Efficient electro-optic semiconductor medium based on type-II heterostructures”, Fizika i Tekhnika Poluprovodnikov, 47:11 (2013), 1542–1553 ; Semiconductors, 47:11 (2013), 1528–1538 |
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| 8. |
V. V. Korenev, A. V. Savel'ev, A. E. Zhukov, A. V. Omel'chenko, M. V. Maksimov, “Effect of carrier dynamics and temperature on two-state lasing in semiconductor quantum dot lasers”, Fizika i Tekhnika Poluprovodnikov, 47:10 (2013), 1406–1413 ; Semiconductors, 47:10 (2013), 1397–1404 |
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| 9. |
N. V. Kryzhanovskaya, A. E. Zhukov, A. M. Nadtochiy, M. V. Maksimov, È. I. Moiseev, M. M. Kulagina, A. V. Savel'ev, E. M. Arakcheeva, A. A. Lipovskii, F. I. Zubov, A. Kapsalis, C. Mesaritakis, D. Syvridis, A. Mintairov, D. Livshits, “Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region”, Fizika i Tekhnika Poluprovodnikov, 47:10 (2013), 1396–1399 ; Semiconductors, 47:10 (2013), 1387–1390 |
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| 10. |
A. E. Zhukov, A. V. Savel'ev, M. V. Maksimov, N. V. Kryzhanovskaya, N. Yu. Gordeev, Yu. M. Shernyakov, A. S. Payusov, A. M. Nadtochiy, F. I. Zubov, V. V. Korenev, “Optimization of the design and mode of operation of a QD laser for reducing the heat-to-bitrate ratio”, Fizika i Tekhnika Poluprovodnikov, 47:8 (2013), 1102–1108 ; Semiconductors, 47:8 (2013), 1097–1102 |
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| 11. |
N. A. Bogoslovskiy, Yu. A. Klimov, A. V. Savelyev, D. K. Shalyga, “Development of supercomputer simulation software based on Matlab source code”, Program Systems: Theory and Applications, 4:2 (2013), 21–42 |
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2012 |
| 12. |
Yu. M. Shernyakov, M. V. Maksimov, A. E. Zhukov, A. V. Savel'ev, V. V. Korenev, F. I. Zubov, N. Yu. Gordeev, D. A. Livshits, “Effect of active-region modulation doping on simultaneous ground-state and excited-state lasing in quantum-dot lasers”, Fizika i Tekhnika Poluprovodnikov, 46:10 (2012), 1353–1356 ; Semiconductors, 46:10 (2012), 1331–1334 |
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| 13. |
N. V. Kryzhanovskaya, A. E. Zhukov, A. M. Nadtochiy, I. A. Slovinskii, M. V. Maksimov, M. M. Kulagina, A. V. Savel'ev, E. M. Arakcheeva, Yu. M. Zadiranov, S. I. Troshkov, A. A. Lipovskii, “High-temperature lasing in a microring laser with an active region based on InAs/InGaAs quantum dots”, Fizika i Tekhnika Poluprovodnikov, 46:8 (2012), 1063–1066 ; Semiconductors, 46:8 (2012), 1040–1043 |
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| 14. |
V. V. Korenev, A. V. Savel'ev, A. E. Zhukov, A. V. Omel'chenko, M. V. Maksimov, “Influence of inhomogeneous broadening and deliberately introduced disorder on the width of the lasing spectrum of a quantum dot laser”, Fizika i Tekhnika Poluprovodnikov, 46:5 (2012), 701–707 ; Semiconductors, 46:5 (2012), 684–689 |
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| 15. |
A. E. Zhukov, M. V. Maksimov, Yu. M. Shernyakov, D. A. Livshits, A. V. Savel'ev, F. I. Zubov, V. V. Klimenko, “Features of simultaneous ground- and excited-state lasing in quantum dot lasers”, Fizika i Tekhnika Poluprovodnikov, 46:2 (2012), 241–246 ; Semiconductors, 46:2 (2012), 231–235 |
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| 16. |
A. E. Zhukov, A. V. Savel'ev, M. V. Maksimov, Yu. M. Shernyakov, E. M. Arakcheeva, F. I. Zubov, A. A. Krasivichev, N. V. Kryzhanovskaya, “Effect of an excited-state optical transition on the linewidth enhancement factor of quantum dot lasers”, Fizika i Tekhnika Poluprovodnikov, 46:2 (2012), 235–240 ; Semiconductors, 46:2 (2012), 225–230 |
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